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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. V. Voronin, V. Yu. Goryainov, V. V. Zabrodskii, E. V. Sherstnev, V. A. Kornev, P. N. Aruev, G. S. Kurskiev, N. A. Zhubr, A. S. Tukachinsky, “Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1922–1929   |
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| 2. |
Yu. A. Barinov, K. K. Zabello, A. A. Logachev, I. N. Poluyanova, E. V. Sherstnev, S. M. Shkol'nik, “Radiation power of a high-current vacuum arc stabilized by an axial magnetic field in the visible and UV ranges of the spectrum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 18–20 ; Tech. Phys. Lett., 47:2 (2021), 118–121 |
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2020 |
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P. N. Aruev, V. P. Belik, V. V. Zabrodskii, E. M. Kruglov, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm”, Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392 ; Tech. Phys., 65:8 (2020), 1333–1339 |
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P. N. Aruev, A. I. Berlev, V. V. Zabrodskii, S. V. Zadorozhny, A. V. Nikolaev, N. A. Titov, E. V. Sherstnev, “Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup”, Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020), 693–698 ; Tech. Phys., 65:4 (2020), 666–671 |
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2019 |
| 5. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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| 6. |
V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 10–13 ; Tech. Phys. Lett., 45:12 (2019), 1226–1229 |
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P. N. Aruev, B. Ya. Ber, A. N. Gorokhov, V. V. Zabrodskii, D. Yu. Kazantsev, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Characteristics of a silicon avalanche photodiode for the near-IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 40–42 ; Tech. Phys. Lett., 45:8 (2019), 780–782 |
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2018 |
| 8. |
N. A. Sobolev, A. E. Kalyadin, K. V. Karabeshkin, R. N. Kyutt, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, V. I. Vdovin, “Defect structure of GaAs layers implanted with nitrogen ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30 ; Tech. Phys. Lett., 44:9 (2018), 817–819 |
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| 9. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
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