|
This article is cited in 3 scientific papers (total in 3 papers)
Experimental instruments and technique
Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
P. N. Aruev, V. P. Belik, V. V. Zabrodskii, E. M. Kruglov, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev Ioffe Institute, St. Petersburg
Abstract:
We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz.
Keywords:
avalanche photodiode, vacuum ultraviolet, silicon.
Received: 05.02.2020 Revised: 11.03.2020 Accepted: 11.03.2020
Citation:
P. N. Aruev, V. P. Belik, V. V. Zabrodskii, E. M. Kruglov, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm”, Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392; Tech. Phys., 65:8 (2020), 1333–1339
Linking options:
https://www.mathnet.ru/eng/jtf5243 https://www.mathnet.ru/eng/jtf/v90/i8/p1386
|
Statistics & downloads: |
Abstract page: | 60 | Full-text PDF : | 43 |
|