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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 4, Pages 437–440
DOI: https://doi.org/10.21883/FTP.2019.04.47435.9038
(Mi phts5529)
 

This article is cited in 1 scientific paper (total in 1 paper)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film

N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev

Ioffe Institute, St. Petersburg
Full-text PDF (218 kB) Citations (1)
Abstract: The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent annealing are studied. The ion energies and the implantation doses are chosen so that the nitrogen-atom concentration profiles coincided in structures of both types. Rutherford proton backscattering spectra are measured in the random and channeling modes, and the concentration profiles of point defects formed are calculated for the samples under study. It is found that the implantation of nitrogen ions introduces nearly the same number of point defects into structures of both types, and the formation of an AlN film by ion-plasma sputtering is accompanied by the formation of an additional number of defects. However, the annealing of structures of both types leads to nearly the same concentrations of residual defects.
Funding agency Grant number
Russian Science Foundation 17-19-01200
Received: 06.12.2018
Revised: 09.12.2018
Accepted: 12.12.2018
English version:
Semiconductors, 2019, Volume 53, Issue 4, Pages 415–418
DOI: https://doi.org/10.1134/S1063782619040250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440; Semiconductors, 53:4 (2019), 415–418
Citation in format AMSBIB
\Bibitem{SobSakSer19}
\by N.~A.~Sobolev, V.~I.~Sakharov, I.~T.~Serenkov, A.~D.~Bondarev, K.~V.~Karabeshkin, E.~V.~Fomin, A.~E.~Kalyadin, V.~M.~Mikushkin, E.~I.~Shek, E.~V.~Sherstnev
\paper Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 4
\pages 437--440
\mathnet{http://mi.mathnet.ru/phts5529}
\crossref{https://doi.org/10.21883/FTP.2019.04.47435.9038}
\elib{https://elibrary.ru/item.asp?id=37644609}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 4
\pages 415--418
\crossref{https://doi.org/10.1134/S1063782619040250}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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