Defect structure of GaAs layers implanted with nitrogen ions

Structural defects formed in epitaxial GaAs layers as a result of 250-keV N$^+$ ion implantation to doses within 5 $\times$ 10$^{14}$–5 $\times$ 10$^{16}$ cm$^{-2}$ have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 $\times$ 10$^{14}$ and 5 $\times$ 10$^{15}$ cm$^{-2}$ led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 $\times$ 10$^{16 }$cm$^{-2}$ led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.