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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24, Pages 10–13
DOI: https://doi.org/10.21883/PJTF.2019.24.48794.17853 (Mi pjtf5233) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range

V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev

Ioffe Institute, St. Petersburg
Full-text PDF (148 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.24.48794.17853
Abstract: Quantum photoresponse yield of a silicon XUV avalanche photodiode prototype with 1.5-mm-diameter active region has been studied in the 320–1100 nm wavelength range. It is established that the proposed avalanche photodiode has the external quantum efficiency above 20 electron/photon in the 580–1000 nm range at a reverse bias voltage of 485 V.
Keywords: avalanche photodiode, XUV range, silicon, dark current.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-13009-офи-м
P.N. Aruev gratefully acknowledges support from the Russian Foundation for Basic Research, project no. 16-29-13009-ofi-m.
Received: 23.04.2019
Revised: 11.09.2019
Accepted: 11.09.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 12, Pages 1226–1229
DOI: https://doi.org/10.1134/S1063785019120289
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 10–13; Tech. Phys. Lett., 45:12 (2019), 1226–1229
Citation in format AMSBIB
\Bibitem{ZabAruBer19}
\by V.~V.~Zabrodskii, P.~N.~Aruev, B.~Ya.~Ber, D.~Yu.~Kazantsev, A.~N.~Gorokhov, A.~V.~Nikolaev, V.~V.~Filimonov, M.~Z.~Shvarts, E.~V.~Sherstnev
\paper Quantum yield of a silicon XUV avalanche photodiode in the 320--1100 nm wavelength range
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 24
\pages 10--13
\mathnet{http://mi.mathnet.ru/pjtf5233}
\crossref{https://doi.org/10.21883/PJTF.2019.24.48794.17853}
\elib{https://elibrary.ru/item.asp?id=41848510}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 12
\pages 1226--1229
\crossref{https://doi.org/10.1134/S1063785019120289}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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