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This article is cited in 2 scientific papers (total in 2 papers)
Characteristics of a silicon avalanche photodiode for the near-IR spectral range
P. N. Aruev, B. Ya. Ber, A. N. Gorokhov, V. V. Zabrodskii, D. Yu. Kazantsev, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev Ioffe Institute, St. Petersburg
Abstract:
Sensitivity in 400 – 1150 nm spectral range, dark current and dynamic characteristics have been tested of a developed silicon avalanche photodiode with an active diameter of 1.5 mm. Developed Si APD possesses: photosensitivity 80–85 A/W in 900 – 1010 nm spectral range, 1.5 nA dark current, rise and fall time less than 2.5 ns with a bias voltage of 350 V.
Keywords:
avalanche photodiode, IR spectral range, silicon, dark current.
Received: 22.04.2019 Revised: 22.04.2019 Accepted: 30.04.2019
Citation:
P. N. Aruev, B. Ya. Ber, A. N. Gorokhov, V. V. Zabrodskii, D. Yu. Kazantsev, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Characteristics of a silicon avalanche photodiode for the near-IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 40–42; Tech. Phys. Lett., 45:8 (2019), 780–782
Linking options:
https://www.mathnet.ru/eng/pjtf5365 https://www.mathnet.ru/eng/pjtf/v45/i15/p40
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