|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
N. A. Sobolev, A. E. Kalyadin, K. F. Shtel'makh, E. I. Shek, “Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 928–931   ; Semiconductors, 55:12 (2021), 891–894 |
5
|
| 2. |
N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova, E. B. Yakimov, “Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 550–553 ; Semiconductors, 55:7 (2021), 633–636 |
2
|
|
2020 |
| 3. |
A. E. Kalyadin, K. F. Shtel'makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek, N. A. Sobolev, “Silicon light-emitting diodes with luminescence from (113) defects”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 580–584 ; Semiconductors, 54:6 (2020), 687–690 |
5
|
|
2019 |
| 4. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
1
|
| 5. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov, S. G. Simakin, “Dislocation-related photoluminescence in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 165–168 ; Semiconductors, 53:2 (2019), 156–159 |
2
|
| 6. |
N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164 ; Semiconductors, 53:2 (2019), 153–155 |
1
|
|
2018 |
| 7. |
N. A. Sobolev, A. E. Kalyadin, K. V. Karabeshkin, R. N. Kyutt, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, V. I. Vdovin, “Defect structure of GaAs layers implanted with nitrogen ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30 ; Tech. Phys. Lett., 44:9 (2018), 817–819 |
2
|
| 8. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
3
|
|
2017 |
| 9. |
N. A. Sobolev, A. E. Kalyadin, E. I. Shek, K. F. Shtel'makh, “Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1182–1184 ; Semiconductors, 51:9 (2017), 1133–1135 |
3
|
| 10. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Dislocation-related photoluminescence in silicon implanted with fluorine ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20 ; Tech. Phys. Lett., 43:1 (2017), 50–52 |
4
|
|
2016 |
| 11. |
N. A. Sobolev, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, K. V. Karabeshkin, “Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions”, Fizika Tverdogo Tela, 58:12 (2016), 2411–2414 ; Phys. Solid State, 58:12 (2016), 2499–2502 |
4
|
| 12. |
N. A. Sobolev, K. F. Shtel'makh, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, D. Yang, “Electroluminescence properties of LEDs based on electron-irradiated $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 254–258 ; Semiconductors, 50:2 (2016), 252–256 |
2
|
| 13. |
A. E. Kalyadin, N. A. Sobolev, A. M. Strel'chuk, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, “Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 250–253 ; Semiconductors, 50:2 (2016), 249–251 |
2
|
| 14. |
N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, A. N. Mikhaylov, D. I. Tetelbaum, “Si:Si LEDs with room-temperature dislocation-related luminescence”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 241–244 ; Semiconductors, 50:2 (2016), 240–243 |
11
|
|
| Organisations |
|
| |
|
|
Contact us: