Dislocation-related photoluminescence in silicon implanted with fluorine ions

The implantation of 85-keV fluorine ions at a dose of 8.3 $\times$ 10$^{14}$ cm$^{-2}$ into single crystal Si does not lead to formation of an amorphous layer. Subsequent annealing at a temperature of 1100$^\circ$C in a chlorine-containing atmosphere is accompanied by the appearance of D1 and D2 lines of dislocation-related luminescence. The intensity of both lines decreases as the annealing duration is increased from 0.25 to 3 h. As the measurement temperature is increased from 80 to 200 K, the intensities of these lines decrease and the positions of their peaks shift to longer wavelengths.