Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates

Dislocation-related photoluminescence is studied in silicon wafers with and without oxygen-ion implantation after multistage heat treatment, which is used in microelectronics to form an internal getter, and final annealing at 1000$^\circ$C in a chlorine-containing atmosphere. In the sample without oxygen implantation, the dislocation-related luminescence line D1 dominates and its intensity exceeds by more than an order of magnitude that for another dislocation-related luminescence line D2. With increasing temperature, the intensity of the D1 line first increases and then decreases. In the implanted sample, the intensities of the D1 and D2 lines grow. For both the lines, only temperature quenching of their intensities is observed. The energies of quenching and buildup of the intensities of dislocation-related photoluminescence lines are determined. Possible reasons for the observed effects are discussed.