Loading [MathJax]/jax/output/CommonHTML/jax.js
Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 161–164
DOI: https://doi.org/10.21883/FTP.2019.02.47092.8977 (Mi phts5580) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions

N. A. Soboleva, O. V. Aleksandrovb, V. I. Sakharova, I. T. Serenkova, E. I. Sheka, A. E. Kalyadina, E. O. Parshinc, N. S. Melesovc

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
Full-text PDF (119 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.02.47092.8977
Abstract: The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm−2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
Received: 28.08.2018
Revised: 10.09.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 153–155
DOI: https://doi.org/10.1134/S1063782619020222
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164; Semiconductors, 53:2 (2019), 153–155
Citation in format AMSBIB
\Bibitem{SobAleSak19}
\by N.~A.~Sobolev, O.~V.~Aleksandrov, V.~I.~Sakharov, I.~T.~Serenkov, E.~I.~Shek, A.~E.~Kalyadin, E.~O.~Parshin, N.~S.~Melesov
\paper Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 161--164
\mathnet{http://mi.mathnet.ru/phts5580}
\crossref{https://doi.org/10.21883/FTP.2019.02.47092.8977}
\elib{https://elibrary.ru/item.asp?id=37476744}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 153--155
\crossref{https://doi.org/10.1134/S1063782619020222}
Linking options:
  • https://www.mathnet.ru/eng/phts5580
  • https://www.mathnet.ru/eng/phts/v53/i2/p161
    • This publication is cited in the following 1 articles:
    1. M. Maliński, Ł. Chrobak, “Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon”, Physica B: Condensed Matter, 578 (2020), 411851  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:75
    Full-text PDF :35
     
      Contact us:
    math-net2025_04@mi-ras.ru     		 Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025