|
This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
N. A. Soboleva, O. V. Aleksandrovb, V. I. Sakharova, I. T. Serenkova, E. I. Sheka, A. E. Kalyadina, E. O. Parshinc, N. S. Melesovc a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
Abstract:
The implantation of Czochralski-grown $p$-type silicon with 1-MeV germanium ions at a dose of 2.5 $\times$ 10$^{14}$ cm$^{-2}$ does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
Received: 28.08.2018 Revised: 10.09.2018
Citation:
N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164; Semiconductors, 53:2 (2019), 153–155
Linking options:
https://www.mathnet.ru/eng/phts5580 https://www.mathnet.ru/eng/phts/v53/i2/p161
|
Statistics & downloads: |
Abstract page: | 42 | Full-text PDF : | 22 |
|