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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Registration of terahertz radiation with silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202 |
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2. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Terahertz emission from silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1027–1033 |
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3. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111 ; Semiconductors, 55:2 (2021), 137–145 |
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2020 |
4. |
N. T. Bagraev, P. A. Golovin, L. E. Klyachkin, A. M. Malyarenko, A. P. Presnukhina, N. I. Rul', A. S. Reukov, V. S. Khromov, “Terahertz radiation sources and detectors based on optical microcavities embedded in the edge channels of silicon nanosandwiches”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1663–1671 ; Tech. Phys., 65:10 (2020), 1591–1599 |
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5. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, K. B. Taranets, “Terahertz response of biological tissue for diagnostic and treatment in personalized medicine”, Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020), 1502–1505 |
6. |
V. V. Romanov, V. A. Kozhevnikov, V. A. Mashkov, N. T. Bagraev, “Description of the magnetization oscillations of a silicon nanostructure in weak fields at room temperature. the Lifshitz–Kosevich formula with variable effective carrier mass”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1331–1335 ; Semiconductors, 54:12 (2020), 1593–1597 |
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2019 |
7. |
V. V. Romanov, V. A. Kozhevnikov, N. T. Bagraev, “Thermodynamic description of oscillations of the magnetization of a silicon nanostructure in weak fields at room temperature. Density of states”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1651–1654 ; Semiconductors, 53:12 (2019), 1633–1636 |
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8. |
V. V. Romanov, V. A. Kozhevnikov, C. T. Tracey, N. T. Bagraev, “De Haas–van Alphen oscillations of the silicon nanostructure in weak magnetic fields at room temperature. Density of states”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1647–1650 ; Semiconductors, 53:12 (2019), 1629–1632 |
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2018 |
9. |
Maxim A. Fomin, Andrey L. Chernev, Nicolay T. Bagraev, Leonid E. Klyachkin, Anton K. Emelyanov, Michael V. Dubina, “Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 512 ; Semiconductors, 52:5 (2018), 612–614 |
10. |
N. T. Bagraev, L. E. Klyachkin, V. S. Khromov, A. M. Malyarenko, V. A. Mashkov, T. V. Matveev, V. V. Romanov, N. I. Rul, K. B. Taranets, “High temperature quantum kinetic effects in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473 ; Semiconductors, 52:4 (2018), 478–484 |
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2016 |
11. |
D. A. Kurdyukov, A. B. Pevtsov, A. N. Smirnov, M. A. Yagovkina, V. Yu. Grigoryev, V. V. Romanov, N. T. Bagraev, V. G. Golubev, “Formation of three-dimensional arrays of magnetic clusters NiO, Co$_{3}$O$_{4}$, and NiCo$_{2}$O$_{4}$ by the matrix method”, Fizika Tverdogo Tela, 58:6 (2016), 1176–1181 ; Phys. Solid State, 58:6 (2016), 1216–1221 |
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12. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1353–1357 ; Semiconductors, 50:10 (2016), 1333–1337 |
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13. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1230–1237 ; Semiconductors, 50:9 (2016), 1208–1215 |
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14. |
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, “Room temperature de Haas–van Alphen effect in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054 ; Semiconductors, 50:8 (2016), 1025–1033 |
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15. |
N. T. Bagraev, E. I. Chaikina, E. Yu. Danilovskii, D. S. Gets, L. E. Klyachkin, T. V. L'vova, A. M. Malyarenko, “Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 474–484 ; Semiconductors, 50:4 (2016), 466–477 |
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2011 |
16. |
N. Bagraev, G. Martin, B. S. Pavlov, A. Yafyasov, “Landau–Zener effect for a quasi-2D periodic sandwich”, Nanosystems: Physics, Chemistry, Mathematics, 2:4 (2011), 32–50 |
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1992 |
17. |
N. T. Bagraev, I. S. Polovtsev, A. Yusupov, “Metastable optical polarization of nuclear moments in silicon”, Fizika Tverdogo Tela, 34:6 (1992), 1949–1952 |
18. |
N. T. Bagraev, R. M. Mirsaatov, I. S. Polovtsev, A. Yusupov, “Metastability of the $\mathrm{Mn}$ center in silicon”, Fizika Tverdogo Tela, 34:3 (1992), 870–878 |
19. |
R. M. Amalskaya, N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “Геттерирование в кремнии в условиях генерации вакансий”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1004–1007 |
20. |
N. T. Bagraev, R. M. Mirsaatov, I. S. Polovtsev, U. Sirozhov, A. Yusupov, “Si$_{1-x}$Ge$_{x}$: самокомпенсация двойных акцепторов цинка
в твердых растворах кремний$-$германий”, Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 836–838 |
21. |
N. T. Bagraev, R. M. Mirsaatov, I. S. Polovtsev, A. Yusupov, “Цинк в кремнии: фотоиндуцированные реакции”, Fizika i Tekhnika Poluprovodnikov, 26:3 (1992), 481–490 |
22. |
N. T. Bagraev, R. M. Mirsaatov, I. S. Polovtsev, U. Sirozhov, A. Yusupov, “Метастабильность центров марганца в твердых растворах
кремний$-$германий”, Fizika i Tekhnika Poluprovodnikov, 26:3 (1992), 427–430 |
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1991 |
23. |
N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “Туннельные эффекты в двумерной кремниевой транзисторной структуре”, Fizika i Tekhnika Poluprovodnikov, 25:9 (1991), 1613–1617 |
24. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, V. L. Sukhanov, “Фрактально-диффузионные $p{-}n$-переходы в кремнии”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 644–654 |
25. |
N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “TUNNEL EFFECTS IN QUANTUM-DIMENSIONAL SILICON TRANSISTOR”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991), 42–46 |
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1990 |
26. |
N. T. Bagraev, D. M. Daraseliya, D. L. Dzhaparidze, V. V. Romanov, T. I. Sanadze, “Magnetic properties of single crystal $\alpha$-$\mathrm{LiIO}_{3}$ containing rare-earth ions”, Fizika Tverdogo Tela, 32:9 (1990), 2814–2816 |
27. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном геттерировании в кремнии
$n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1563–1573 |
28. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном генерировании в кремнии
$n$-типа. I. Геттерирующие микродефекты”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1557–1562 |
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1989 |
29. |
N. T. Bagraev, I. S. Polovtsev, “Реакции центров железа, индуцированные пиннингом уровня Ферми
в кремнии $p$-типа”, Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1643–1645 |
30. |
N. T. Bagraev, I. S. Polovtsev, “Оптическая самокомпенсация донорных центров железа в кремнии”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1098–1100 |
31. |
I. G. Atabaev, N. T. Bagraev, V. A. Mashkov, M. S. Saidov, U. Sirozhov, A. Yusupov, “Реакции центров золота с отрицательной корреляционной энергией
в твердых растворах Si$-$Ge”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 525–531 |
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1988 |
32. |
N. T. Bagraev, A. A. Lebedev, V. A. Mashkov, I. S. Polovtsev, “Self-compensation of iron centers in silicon under optical pumping”, Fizika Tverdogo Tela, 30:7 (1988), 2076–2084 |
33. |
N. T. Bagraev, “METASTABILITY OF PHOTOEMISSION FROM WITH NEGATIVE ELECTRON-AFFINITY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988), 329–334 |
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1987 |
34. |
N. T. Bagraev, A. L. Diikov, L. E. Klyachkin, V. A. Mashkov, V. L. Sukhanov, “Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1025–1029 |
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1986 |
35. |
N. T. Bagraev, L. S. Vlasenko, V. A. Mashkov, “Study of dislocation dangling bond annealing in silicon by optical polarization of the nuclear moment technique”, Fizika Tverdogo Tela, 28:4 (1986), 1190–1193 |
36. |
N. T. Bagraev, L. S. Vlasenko, V. A. Mashkov, V. A. Khramtsov, “Optical polarization of nuclear moments in silicon with one-dimensional defects”, Fizika Tverdogo Tela, 28:2 (1986), 634–637 |
37. |
I. G. Atabaev, N. T. Bagraev, V. A. Mashkov, M. S. Saidov, A. Yusupov, “Reactions of Gold Centers under Optical Pumping of Silicon–Germanium Solid Solutions”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 745–747 |
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1985 |
38. |
N. T. Bagraev, L. S. Vlasenko, A. A. Lebedev, “SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL
POLARIZATION STUDY”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2162–2169 |
39. |
N. T. Bagraev, L. S. Vlasenko, A. A. Lebedev, “SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE
RELAXATION STUDY”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2149–2161 |
40. |
N. T. Bagraev, V. A. Mashkov, R. P. Seisyan, V. L. Sukhanov, N. M. Shmidt, “FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF
OBTAINING PLANAR SILICON P-N-JUNCTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2064–2066 |
41. |
N. T. Bagraev, V. A. Mashkov, K. V. Mukovnikov, “Semiconductor–Dielectric Transition in Lightly Doped Thermally Treated Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 611–615 |
42. |
N. T. Bagraev, V. A. Mashkov, D. S. Poloskin, “Spin-dependent negative photo-conductivity in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 568–573 |
43. |
N. T. Bagraev, A. N. Baranov, T. I. Voronina, Yu. N. Tolparov, Yu. P. Yakovlev, “Suppression of natural acceptors in $Ga\,Sb$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985), 117–121 |
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1984 |
44. |
N. T. Bagraev, L. S. Vlasenko, V. M. Volle, V. B. Voronkov, I. V. Grekhov, V. V. Dobrovensky, A. I. Shagun, “POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON
FOR HIGH-POWER SEMICONDUCTOR-DEVICES”, Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 917–928 |
45. |
N. T. Bagraev, L. S. Vlasenko, V. M. Volle, V. B. Voronkov, I. V. Grekhov, Yu. A. Karpov, B. M. Turovsky, “THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY
THE CHOKHRALSKII METHOD”, Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984), 207–208 |
46. |
N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushnii, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin, “Effect of Rare-Earth Elements on Carrier Mobility in InP and InGaAs Epitaxial Layers”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 83–85 |
47. |
N. T. Bagraev, L. S. Vlasenko, V. M. Volle, V. B. Voronkov, I. V. Grekhov, M. L. Kojuh, V. A. Kozlov, “SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON,
CONTAINING RARE-EARTH ELEMENTS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984), 880–882 |
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1983 |
48. |
N. T. Bagraev, N. A. Vitovskiy, L. S. Vlasenko, T. V. Mashovets, O. Rakhimov, “Скопления электрически активных центров в термообработанном кремнии,
выращенном по методу Чохральского”, Fizika i Tekhnika Poluprovodnikov, 17:11 (1983), 1979–1984 |
49. |
N. T. Bagraev, L. S. Vlasenko, Y. A. Karpov, V. M. Turovskii, “Распад твердого раствора золота в бездислокационном кремнии”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 276–280 |
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