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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1647–1650
DOI: https://doi.org/10.21883/FTP.2019.12.48620.9241 (Mi phts5328) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

De Haas–van Alphen oscillations of the silicon nanostructure in weak magnetic fields at room temperature. Density of states

V. V. Romanova, V. A. Kozhevnikova, C. T. Traceya, N. T. Bagraevab

a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
Full-text PDF (298 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2019.12.48620.9241
Abstract: The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.
Keywords: magnetization, silicon nanosandwich, effective mass, size quantization, de Haas–van Alphen effect.
Received: 19.08.2019
Revised: 23.08.2019
Accepted: 23.08.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1629–1632
DOI: https://doi.org/10.1134/S1063782619160231
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Romanov, V. A. Kozhevnikov, C. T. Tracey, N. T. Bagraev, “De Haas–van Alphen oscillations of the silicon nanostructure in weak magnetic fields at room temperature. Density of states”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1647–1650; Semiconductors, 53:12 (2019), 1629–1632
Citation in format AMSBIB
\Bibitem{RomKozTra19}
\by V.~V.~Romanov, V.~A.~Kozhevnikov, C.~T.~Tracey, N.~T.~Bagraev
\paper De Haas--van Alphen oscillations of the silicon nanostructure in weak magnetic fields at room temperature. Density of states
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1647--1650
\mathnet{http://mi.mathnet.ru/phts5328}
\crossref{https://doi.org/10.21883/FTP.2019.12.48620.9241}
\elib{https://elibrary.ru/item.asp?id=41848189}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1629--1632
\crossref{https://doi.org/10.1134/S1063782619160231}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1647
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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