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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1353–1357
(Mi phts6338)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
N. T. Bagraevab, A. L. Chernevc, L. E. Klyachkinab, A. M. Malyarenkob, A. K. Emelyanovc, M. V. Dubinac a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by $\delta$ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.
Received: 28.03.2016 Accepted: 04.04.2016
Citation:
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1353–1357; Semiconductors, 50:10 (2016), 1333–1337
Linking options:
https://www.mathnet.ru/eng/phts6338 https://www.mathnet.ru/eng/phts/v50/i10/p1353
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Abstract page: | 43 | Full-text PDF : | 8 |
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