Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 473 (Mi phts5869)  
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Transport in heterostructures

High temperature quantum kinetic effects in silicon nanosandwiches

N. T. Bagraevab, L. E. Klyachkina, V. S. Khromova, A. M. Malyarenkoa, V. A. Mashkovb, T. V. Matveevb, V. V. Romanovb, N. I. Rulab, K. B. Taranetsb

a Ioffe Institute, 194021 St. Petersburg, Russia
b Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia
Full-text PDF (28 kB) Citations (2)
Abstract: The negative-$U$ impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
Saint Petersburg State University
Russian Academy of Sciences - Federal Agency for Scientific Organizations
The work was supported by the programme “5-100-2020”, project 6.1.1 of SPSPU (2014); project 1963 of SPbPU (2014); the programme of fundamental studies of the Presidium of the Russian Academy of Sciences “Actual problems of low temperature physics” (grant 10.4); project 10.17 “Interatomic and molecular interactions in gases and condensed matter”.
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 478–484
DOI: https://doi.org/10.1134/S1063782618040061
Bibliographic databases:
Document Type: Article
Language: English
Citation: N. T. Bagraev, L. E. Klyachkin, V. S. Khromov, A. M. Malyarenko, V. A. Mashkov, T. V. Matveev, V. V. Romanov, N. I. Rul, K. B. Taranets, “High temperature quantum kinetic effects in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473; Semiconductors, 52:4 (2018), 478–484
Citation in format AMSBIB
\Bibitem{BagKlyKhr18}
\by N.~T.~Bagraev, L.~E.~Klyachkin, V.~S.~Khromov, A.~M.~Malyarenko, V.~A.~Mashkov, T.~V.~Matveev, V.~V.~Romanov, N.~I.~Rul, K.~B.~Taranets
\paper High temperature quantum kinetic effects in silicon nanosandwiches
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 473
\mathnet{http://mi.mathnet.ru/phts5869}
\elib{https://elibrary.ru/item.asp?id=32740468}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 478--484
\crossref{https://doi.org/10.1134/S1063782618040061}
Linking options:
  • https://www.mathnet.ru/eng/phts5869
  • https://www.mathnet.ru/eng/phts/v52/i4/p473
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:41
    Full-text PDF :21
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024