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Publications in Math-Net.Ru |
Citations |
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1984 |
| 1. |
V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557  |
| 2. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 Ê”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441  ] |
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| 3. |
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432 ] |
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1982 |
| 4. |
L. M. Dolginov, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, V. I. Shveĭkin, E. G. Shevchenko, “Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers”, Kvantovaya Elektronika, 9:9 (1982), 1902–1904 [Sov J Quantum Electron, 12:9 (1982), 1237–1238 ] |
| 5. |
L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127 ] |
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1981 |
| 6. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs”, Kvantovaya Elektronika, 8:9 (1981), 1994–1996 [Sov J Quantum Electron, 11:9 (1981), 1208–1209 ] |
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1980 |
| 7. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range”, Kvantovaya Elektronika, 7:9 (1980), 1990–1992 [Sov J Quantum Electron, 10:9 (1980), 1146–1148 ] |
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1978 |
| 8. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, T. V. Berdnikova, M. G. Mil'vidskii, V. P. Orlov, Yu. K. Panteleev, B. N. Sverdlov, E. G. Shevchenko, “High-efficiency GaInPAs/InP light-emitting diodes”, Kvantovaya Elektronika, 5:11 (1978), 2488–2489 [Sov J Quantum Electron, 8:11 (1978), 1404–1405] |
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1976 |
| 9. |
L. M. Dolginov, L. V. Druzhinina, E. M. Krasavina, I. V. Kryukova, E. V. Matveenko, Yu. V. Petrushenko, S. P. Prokof'eva, V. P. Tsyganov, E. G. Shevchenko, “Spontaneous and stimulated emission from Ga<sub><i>x</i></sub>In<sub>1<i>–x</i></sub>As, GaAs<sub><i>x</i></sub>Sb<sub>1<i>–x</i></sub>, and Ga<sub><i>x</i></sub>In<sub>1<i>–x</i></sub>As<sub>1<i>–y</i></sub>P<sub><i>y</i></sub> solid solutions”, Kvantovaya Elektronika, 3:11 (1976), 2490–2494 [Sov J Quantum Electron, 6:11 (1976), 1367–1369] |
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1974 |
| 10. |
A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, “Heterojunction lasers made of Ga<sub><i>x</i></sub>In<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>P<sub>1–<i>y</i></sub> and Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>Sb<sub><i>y</i></sub>As<sub>1–<i>y</i></sub> solid solutions”, Kvantovaya Elektronika, 1:10 (1974), 2294–2295 [Sov J Quantum Electron, 4:10 (1975), 1281] |
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1971 |
| 11. |
A. P. Bogatov, P. G. Eliseev, V. I. Panteleev, E. G. Shevchenko, “Comparison of the instantaneous and averaged emission spectra of an injection laser operating under spiking conditions”, Kvantovaya Elektronika, 1971, no. 5, 93–95 [Sov J Quantum Electron, 1:5 (1972), 500–502] |
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