|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
G. Yu. Sidorov, Yu. G. Sidorov, V. A. Shvets, V. S. Varavin, “Formation of acceptor centers in CdHgTe as a result of water and heat treatments”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 331–335   ; Semiconductors, 55:5 (2021), 461–465 |
| 2. |
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev, D. V. Marin, “The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021), 33–35 ; Tech. Phys. Lett., 47:2 (2021), 189–192 |
|
2019 |
| 3. |
T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, D. V. Kozlov, V. I. Chernichkin, A. V. Galeeva, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1297–1302 ; Semiconductors, 53:9 (2019), 1266–1271 |
2
|
| 4. |
V. I. Ivanov-Omskii, K. J. Mynbaev, I. N. Trapeznikova, D. A. Andryushchenko, N. L. Bazhenov, N. N. Mikhailov, V. S. Varavin, V. G. Remesnik, S. A. Dvoretskii, M. V. Yakushev, “An optical study of disordering in cadmium mercury telluride solid solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 24–27 ; Tech. Phys. Lett., 45:6 (2019), 553–556 |
2
|
|
2018 |
| 5. |
V. S. Evstigneev, V. S. Varavin, A. V. Chilyasov, V. G. Remesnik, A. N. Moiseev, B. S. Stepanov, “Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 554–559 ; Semiconductors, 52:6 (2018), 702–707 |
4
|
|
2016 |
| 6. |
V. S. Varavin, D. V. Marin, M. V. Yakushev, “Electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x$ = 0.3) films grown by molecular beam epitaxy on Si(013) substrates”, Fizika Tverdogo Tela, 58:4 (2016), 625–629 ; Phys. Solid State, 58:4 (2016), 641–646 |
1
|
| 7. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, F. Teppe, “Mercury vacancies as divalent acceptors in HgTe/Cd$_{x}$Hg$_{1-x}$Te structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1690–1696 ; Semiconductors, 50:12 (2016), 1662–1668 |
6
|
| 8. |
V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretskii, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev, “CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1652–1656 ; Semiconductors, 50:12 (2016), 1626–1629 |
4
|
| 9. |
K. J. Mynbaev, S. V. Zablotsky, A. V. Shilyaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, S. A. Dvoretskii, “Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 208–211 ; Semiconductors, 50:2 (2016), 208–211 |
6
|
|
2013 |
| 10. |
Yu. N. Nozdrin, A. V. Okomel'kov, V. S. Varavin, M. V. Yakushev, S. A. Dvoretskii, “Dual-wavelength stimulated emission from a double-layer Cd$_x$Hg$_{1-x}$Te structure at wavelengths of 2 and 3 $\mu$m”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:6 (2013), 404–408 ; JETP Letters, 97:6 (2013), 358–361   |
2
|
|
2005 |
| 11. |
I. V. Sabinina, A. K. Gutakovskii, Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Latyshev, “Observation of antiphase domains in Cd<sub>x</sub>Hg<sub>1−<i>x</i></sub>Te films on silicon by the phase contrast method in atomic force microscopy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 326–330 ; JETP Letters, 82:5 (2005), 292–296 |
4
|
|
| Organisations |
|
| |
|
|
Contact us: