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This article is cited in 4 scientific papers (total in 4 papers)
Electronic properties of semiconductors
Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method
V. S. Evstigneevab, V. S. Varavinc, A. V. Chilyasova, V. G. Remesnikc, A. N. Moiseevab, B. S. Stepanovda a Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences
Abstract:
The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped $p$-type Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with x $\approx$ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230$^{\circ}$C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360$^{\circ}$C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.
Received: 26.07.2017 Accepted: 05.09.2017
Citation:
V. S. Evstigneev, V. S. Varavin, A. V. Chilyasov, V. G. Remesnik, A. N. Moiseev, B. S. Stepanov, “Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 554–559; Semiconductors, 52:6 (2018), 702–707
Linking options:
https://www.mathnet.ru/eng/phts5800 https://www.mathnet.ru/eng/phts/v52/i6/p554
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