Electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x$ = 0.3) films grown by molecular beam epitaxy on Si(013) substrates

The electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x\approx$ 0.3) films undoped and doped with indium during their growth were investigated. The as-grown films were subjected to heat treatment in mercury vapor. The magnetic field dependences of the Hall effect in the magnetic field range of 0.05–1.0 T at 77 K were explained by the fact that, in the films, there are two types of electrons with high and low mobilities. The analysis of the temperature dependences of the minority carrier lifetime in the range of 77–300 K revealed that the as-grown films contain two types of traps with different energies. It was found that annealing at a saturated mercury vapor pressure increases the minority carrier lifetime due to the suppression of recombination centers, which can be associated with growth defects in Cd$_{x}$Hg$_{1-x}$Te/CdTe/Si heterostructures.