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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 208–211 (Mi phts6539)  
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates

K. J. Mynbaevab, S. V. Zablotskybc, A. V. Shilyaevb, N. L. Bazhenovb, M. V. Yakushevd, D. V. Marind, V. S. Varavind, S. A. Dvoretskiied

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
e Tomsk State University
Full-text PDF (220 kB) Citations (6)
Abstract: Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of $\sim$30 meV. The possible relationship between energy states and crystal-structure defects is discussed.
Keywords: Cadmium Telluride, Minority Carrier Lifetime, CdHgTe, Heteroepitaxial Structure, Mercury Vacancy.
Received: 27.05.2015
Accepted: 05.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 208–211
DOI: https://doi.org/10.1134/S1063782616020160
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. J. Mynbaev, S. V. Zablotsky, A. V. Shilyaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, S. A. Dvoretskii, “Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 208–211; Semiconductors, 50:2 (2016), 208–211
Citation in format AMSBIB
\Bibitem{MynZabShi16}
\by K.~J.~Mynbaev, S.~V.~Zablotsky, A.~V.~Shilyaev, N.~L.~Bazhenov, M.~V.~Yakushev, D.~V.~Marin, V.~S.~Varavin, S.~A.~Dvoretskii
\paper Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 208--211
\mathnet{http://mi.mathnet.ru/phts6539}
\elib{https://elibrary.ru/item.asp?id=25668095}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 208--211
\crossref{https://doi.org/10.1134/S1063782616020160}
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  • https://www.mathnet.ru/eng/phts/v50/i2/p208
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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