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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021), 501–506   ; JETP Letters, 113:8 (2021), 498–503   |
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| 2. |
A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, A. V. Dvurechenskii, D. E. Utkin, “Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 596–601 ; Semiconductors, 55:8 (2021), 654–659 |
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2019 |
| 3. |
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Plasmonic field enhancement by metallic subwave lattices on silicon in the near-infrared range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019), 393–399 ; JETP Letters, 110:6 (2019), 411–416 |
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| 4. |
A. A. Bloshkin, A. I. Yakimov, A. V. Dvurechenskii, “Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 206–210 ; Semiconductors, 53:2 (2019), 195–199 |
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2017 |
| 5. |
A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov, “Valence-band offsets in strained SiGeSn/Si layers with different tin contents”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 342–347 ; Semiconductors, 51:3 (2017), 329–334 |
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2015 |
| 6. |
A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister, A. V. Dvurechenskii, “Suppression of hole relaxation in small-sized Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015), 678–682 ; JETP Letters, 102:9 (2015), 594–598 |
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| 7. |
A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister, A. V. Dvurechenskii, “Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015), 846–850 ; JETP Letters, 101:11 (2015), 750–753 |
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2010 |
| 8. |
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010), 43–46 ; JETP Letters, 92:1 (2010), 36–39 |
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2009 |
| 9. |
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Excitons in Ge/Si double quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009), 621–625 ; JETP Letters, 90:8 (2009), 569–573 |
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2006 |
| 10. |
A. I. Yakimov, A. V. Dvurechenskii, A. A. Bloshkin, A. V. Nenashev, “Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006), 189–194 ; JETP Letters, 83:4 (2006), 156–161 |
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2003 |
| 11. |
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, A. A. Bloshkin, “Phononless hopping conduction in two-dimensional layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 445–449 ; JETP Letters, 77:7 (2003), 376–380 |
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