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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
G. V. Nenashev, M. S. Istomina, I. P. Shcherbakov, A. V. Shvidchenko, V. N. Petrov, A. N. Aleshin, “Composite films based on carbon quantum dots in a matrix of PEDOT:PSS conductive polymer”, Fizika Tverdogo Tela, 63:8 (2021), 1183–1188   ; Phys. Solid State, 63:8 (2021), 1276–1282 |
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| 2. |
A. N. Aleshin, P. P. Shirinkin, A. K. Khripunov, N. N. Saprykina, I. P. Shcherbakov, I. N. Trapeznikova, P. A. Aleshin, V. N. Petrov, “Photoluminescence and photoconductivity of lead halide perovskite films modified with mixed cellulose esters”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 987 ; Tech. Phys., 66:7 (2021), 827–834  |
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2019 |
| 3. |
A. A. Bazanova, V. N. Petrov, A. N. Aleshin, “Conductivity of composite films based on conductive polymer PEDOT:PSS, graphene oxide and nanoparticles TiO$_{2}$ for contact layers of perovskite photovoltaic structures”, Fizika Tverdogo Tela, 61:4 (2019), 773–778 ; Phys. Solid State, 61:4 (2019), 659–664 |
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2018 |
| 4. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2017 |
| 5. |
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films”, Fizika Tverdogo Tela, 59:12 (2017), 2457–2461 ; Phys. Solid State, 59:12 (2017), 2486–2490 |
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| 6. |
L. N. Luk'yanova, A. Yu. Bibik, V. A. Aseev, O. A. Usov, I. V. Makarenko, V. N. Petrov, N. V. Nikonorov, “On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 763–765 ; Semiconductors, 51:6 (2017), 729–731 |
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2016 |
| 7. |
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles”, Fizika Tverdogo Tela, 58:9 (2016), 1818–1825 ; Phys. Solid State, 58:9 (2016), 1882–1890 |
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| 8. |
L. N. Luk'yanova, A. Yu. Bibik, V. A. Aseev, O. A. Usov, I. V. Makarenko, V. N. Petrov, N. V. Nikonorov, V. A. Kutacov, “Surface morphology and Raman spectroscopy of thin layers of antimony and bismuth chalcogenides”, Fizika Tverdogo Tela, 58:7 (2016), 1390–1397 ; Phys. Solid State, 58:7 (2016), 1440–1447 |
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| 9. |
E. V. Rut'kov, E. Yu. Afanas'eva, V. N. Petrov, N. R. Gall', “Fabrication of graphene and graphite films on the Ni(111) surface”, Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016), 121–124 ; Tech. Phys., 61:11 (2016), 1724–1728 |
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| 10. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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| 11. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 12. |
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 80–86 ; Tech. Phys. Lett., 42:7 (2016), 701–703 |
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