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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1195–1201
(Mi phts6361)
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This article is cited in 8 scientific papers (total in 8 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
V. N. Petrova, V. G. Sidorovb, N. A. Talnishnikhc, A. E. Chernyakovc, E. I. Shabuninaa, N. M. Shmidta, A. S. Usikovd, H. Helavad, Yu. N. Makarovde a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d Nitride Crystals Inc., USA
e Nitride Crystals Group, St.-Petersburg
Abstract:
It is shown that a three-dimensional fractal–percolation system is formed in nanomaterials of light-emitting InGaN/GaN and AlGaN/GaN structures in the presence of conducting extended defects and local inhomogeneities of the composition of the solid solutions; this system determines the electrophysical properties of light-emitting diodes fabricated on the basis of these structures. The geometry and properties of this system depend nonlinearly on the degree of disorder in the nanomaterial of the structures, on the value of the injection current, and on the rate of alloy growth.
Received: 09.03.2016 Accepted: 15.03.2016
Citation:
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201; Semiconductors, 50:9 (2016), 1173–1179
Linking options:
https://www.mathnet.ru/eng/phts6361 https://www.mathnet.ru/eng/phts/v50/i9/p1195
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Abstract page: | 38 | Full-text PDF : | 9 |
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