Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH$_{3}$NH$_{3}$PbBr$_{3}$, were obtained and their electrical properties were studied. FETs made of CH$_{3}$NH$_{3}$PbBr$_{3}$ films possess current-voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ at 300 K in saturation and weak field regimes were $\sim$5 and $\sim$2 cm$^2$/V s, respectively, whereas electron mobility is $\sim$3 cm$^2$/V s, which exceeds the mobility value $\sim$1 cm$^2$/V s obtained earlier for FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$.