Abstract:
Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH$_{3}$NH$_{3}$PbBr$_{3}$, were obtained and their electrical properties were studied. FETs made of CH$_{3}$NH$_{3}$PbBr$_{3}$ films possess current-voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ at 300 K in saturation and weak field regimes were $\sim$5 and $\sim$2 cm$^2$/V s, respectively, whereas electron mobility is $\sim$3 cm$^2$/V s, which exceeds the mobility value $\sim$1 cm$^2$/V s obtained earlier for FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$.
Citation:
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films”, Fizika Tverdogo Tela, 59:12 (2017), 2457–2461; Phys. Solid State, 59:12 (2017), 2486–2490
\Bibitem{AleShcTra17}
\by A.~N.~Aleshin, I.~P.~Shcherbakov, I.~N.~Trapeznikova, V.~N.~Petrov
\paper Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 12
\pages 2457--2461
\mathnet{http://mi.mathnet.ru/ftt9375}
\crossref{https://doi.org/10.21883/FTT.2017.12.45248.108}
\elib{https://elibrary.ru/item.asp?id=30685657}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 12
\pages 2486--2490
\crossref{https://doi.org/10.1134/S1063783417120034}
Linking options:
https://www.mathnet.ru/eng/ftt9375
https://www.mathnet.ru/eng/ftt/v59/i12/p2457
This publication is cited in the following 16 articles:
Citation in format AMSBIB
Contact us: