A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films”, Fizika Tverdogo Tela, 59:12 (2017), 2457–2461; Phys. Solid State, 59:12 (2017), 2486

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Fizika Tverdogo Tela, 2017, Volume 59, Issue 12, Pages 2457–2461
DOI: https://doi.org/10.21883/FTT.2017.12.45248.108 (Mi ftt9375)

This article is cited in 16 scientific papers (total in 16 papers)

Polymers

Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films

A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov

Ioffe Institute, St. Petersburg

Full-text PDF (755 kB) Citations (16)

DOI: https://doi.org/10.21883/FTT.2017.12.45248.108

Abstract: Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH$_{3}$NH$_{3}$PbBr$_{3}$, were obtained and their electrical properties were studied. FETs made of CH$_{3}$NH$_{3}$PbBr$_{3}$ films possess current-voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$ at 300 K in saturation and weak field regimes were $\sim$5 and $\sim$2 cm$^2$/V s, respectively, whereas electron mobility is $\sim$3 cm$^2$/V s, which exceeds the mobility value $\sim$1 cm$^2$/V s obtained earlier for FETs based on CH$_{3}$NH$_{3}$PbBr$_{3}$.

Received: 03.04.2017

English version:
Physics of the Solid State, 2017, Volume 59, Issue 12, Pages 2486–2490
DOI: https://doi.org/10.1134/S1063783417120034

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films”, Fizika Tverdogo Tela, 59:12 (2017), 2457–2461; Phys. Solid State, 59:12 (2017), 2486–2490

Citation in format AMSBIB

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\by A.~N.~Aleshin, I.~P.~Shcherbakov, I.~N.~Trapeznikova, V.~N.~Petrov

\paper Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films

\jour Fizika Tverdogo Tela

\yr 2017

\vol 59

\issue 12

\pages 2457--2461

\mathnet{http://mi.mathnet.ru/ftt9375}

\crossref{https://doi.org/10.21883/FTT.2017.12.45248.108}

\elib{https://elibrary.ru/item.asp?id=30685657}

\transl

\jour Phys. Solid State

\yr 2017

\vol 59

\issue 12

\pages 2486--2490

\crossref{https://doi.org/10.1134/S1063783417120034}

Linking options:

https://www.mathnet.ru/eng/ftt9375

https://www.mathnet.ru/eng/ftt/v59/i12/p2457

This publication is cited in the following 16 articles:

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Vivian Nketia-Yawson, Benjamin Nketia-Yawson, Jea Woong Jo, “Functional impact of gate dielectrics in emerging metal halide perovskite field-effect transistors”, Materials Today Physics, 45 (2024), 101475
E. N. Muratova, V. A. Moshnikov, A. N. Aleshin, I. A. Vrublevskii, N. V. Lushpa, A. K. Tuchkovskii, “Issledovanie i optimizatsiya protsessov kristallizatsii rastvorov gibridnykh galogenidnykh perovskitov sostava CH3NH3PBI3”, Fizika i khimiya stekla, 49:6 (2023), 662
E. N. Muratova, V. A. Moshnikov, A. N. Aleshin, I. A. Vrublevskii, N. V. Lushpa, A. K. Tuchkovskii, “Research and Optimization of Crystallization Processes of Solutions of Hybrid Halide Perovskites of the CH3NH3PbI3 Composition”, Glass Phys Chem, 49:6 (2023), 672
Grigorii V. Nenashev, Roman S. Kryukov, Maria S. Istomina, Petr A. Aleshin, Igor P. Shcherbakov, Vasily N. Petrov, Vyacheslav A. Moshnikov, Andrey N. Aleshin, “Carbon quantum dots: organic–inorganic perovskite composites for optoelectronic applications”, J Mater Sci: Mater Electron, 34:31 (2023)
Ye Su, Ning Li, Li-Bin Shi, Yan-Zhou Wang, Ping Qian, “Investigation of carrier transport behavior for cubic CH3NH3SnX3 and CH3NH3PbX3 (X=Br and I) using Boltzmann transport equation”, Computational Materials Science, 213 (2022), 111609
A. M. Ivanov, G. V. Nenashev, A. N. Aleshin, “Low-frequency noise and impedance spectroscopy of device structures based on perovskite-graphene oxide composite films”, J Mater Sci: Mater Electron, 33:27 (2022), 21666
Huihui Zhu, Ao Liu, Yong-Young Noh, “Recent progress on metal halide perovskite field-effect transistors”, Journal of Information Display, 22:4 (2021), 257
Fabian Paulus, Colin Tyznik, Oana D. Jurchescu, Yana Vaynzof, “Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors”, Adv Funct Materials, 31:29 (2021)
Santanu Jana, Emanuel Carlos, Shrabani Panigrahi, Rodrigo Martins, Elvira Fortunato, “Toward Stable Solution-Processed High-Mobility p-Type Thin Film Transistors Based on Halide Perovskites”, ACS Nano, 14:11 (2020), 14790
A. V. Andrianov, A. N. Aleshin, L. B. Matyushkin, “Terahertz vibrational modes in CH$_3$NH$_3$PbI$_3$ and CsPbI$_3$ perovskite films”, JETP Letters, 109:1 (2019), 28–32
Tingjun Wu, Wojciech Pisula, Mohd Yusoff Abd Rashid, Peng Gao, “Application of Perovskite‐Structured Materials in Field‐Effect Transistors”, Adv Elect Materials, 5:12 (2019)
Toshinori Matsushima, Shinobu Terakawa, Matthew R. Leyden, Takashi Fujihara, Chuanjiang Qin, Chihaya Adachi, “Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor”, Journal of Applied Physics, 125:23 (2019)
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface”, Phys. Solid State, 60:5 (2018), 1029–1034
Andrey N. Aleshin, Igor P. Shcherbakov, Ekaterina V. Gushchina, Leo B. Matyushkin, Vyacheslav A. Moshnikov, “Solution-processed field-effect transistors based on polyfluorene –cesium lead halide nanocrystals composite films with small hysteresis of output and transfer characteristics”, Organic Electronics, 50 (2017), 213

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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