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This article is cited in 4 scientific papers (total in 4 papers)
Polymers
Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov Ioffe Institute, St. Petersburg
Abstract:
Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of $\sim$1: 1 and Ni concentrations of $\sim$3–05 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at $V_\mathrm{G}$ = -10 V were found to be $\sim$0.46 cm$^2$/(V s) for P3HT: [60]PCBM: Ni and $\sim$4.7 cm$^2$/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied.
Received: 29.02.2016
Citation:
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles”, Fizika Tverdogo Tela, 58:9 (2016), 1818–1825; Phys. Solid State, 58:9 (2016), 1882–1890
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https://www.mathnet.ru/eng/ftt9866 https://www.mathnet.ru/eng/ftt/v58/i9/p1818
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