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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6, Pages 763–765
DOI: https://doi.org/10.21883/FTP.2017.06.44553.13
(Mi phts6131)
 

This article is cited in 2 scientific papers (total in 2 papers)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride

L. N. Luk'yanovaa, A. Yu. Bibikb, V. A. Aseevb, O. A. Usova, I. V. Makarenkoa, V. N. Petrova, N. V. Nikonorovb

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (111 kB) Citations (2)
Abstract: Resonant micro-Raman spectra and the morphology of the interlayer Van der Waals surface are studied for layered thin films of $n$-Bi$_{2}$Te$_{3}$ and solid solutions based on Bi$_{2}$Te$_{3}$. It is found that the composition, thickness, surface morphology, and the method of obtaining films affect the relative intensity of Raman phonons, which are sensitive to the topological surface states of Dirac fermions.
Received: 12.12.2016
Accepted: 19.12.2016
English version:
Semiconductors, 2017, Volume 51, Issue 6, Pages 729–731
DOI: https://doi.org/10.1134/S1063782617060197
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. N. Luk'yanova, A. Yu. Bibik, V. A. Aseev, O. A. Usov, I. V. Makarenko, V. N. Petrov, N. V. Nikonorov, “On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 763–765; Semiconductors, 51:6 (2017), 729–731
Citation in format AMSBIB
\Bibitem{LukBibAse17}
\by L.~N.~Luk'yanova, A.~Yu.~Bibik, V.~A.~Aseev, O.~A.~Usov, I.~V.~Makarenko, V.~N.~Petrov, N.~V.~Nikonorov
\paper On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 6
\pages 763--765
\mathnet{http://mi.mathnet.ru/phts6131}
\crossref{https://doi.org/10.21883/FTP.2017.06.44553.13}
\elib{https://elibrary.ru/item.asp?id=29404941}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 6
\pages 729--731
\crossref{https://doi.org/10.1134/S1063782617060197}
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  • https://www.mathnet.ru/eng/phts/v51/i6/p763
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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