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This article is cited in 2 scientific papers (total in 2 papers)
Physical electronics
Fabrication of graphene and graphite films on the Ni(111) surface
E. V. Rut'kova, E. Yu. Afanas'evaa, V. N. Petrova, N. R. Gall'ab a Ioffe Institute, St. Petersburg
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Abstract:
The growth of graphene and graphite films on nickel surface under conditions for ultrahigh-vacuum carburization and subsequent annealing is studied at film thicknesses ranging from a single layer to $\approx$1000 layers. The cooling of nickel carburized at a temperature of 900–1500 K leads to the growth of graphene and thin graphite films the thickness of which depends on the carburization temperature and the growth temperature of the films. Dissolution of nickel with graphite film in diluted sulfuric acid makes it possible to separate the film from the sample. The graphite film thickness amounts to $\sim$0.4 $\mu$m at carburization and growth temperatures of 1500 and 1100 K, respectively.
Received: 09.02.2016
Citation:
E. V. Rut'kov, E. Yu. Afanas'eva, V. N. Petrov, N. R. Gall', “Fabrication of graphene and graphite films on the Ni(111) surface”, Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016), 121–124; Tech. Phys., 61:11 (2016), 1724–1728
Linking options:
https://www.mathnet.ru/eng/jtf6400 https://www.mathnet.ru/eng/jtf/v86/i11/p121
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Abstract page: | 49 | Full-text PDF : | 19 |
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