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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, A. A. Zaitsev, V. I. Garmash, “Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1260–1263   |
| 2. |
V. I. Egorkin, S. V. Obolensky, V. E. Zemlyakov, A. A. Zaitsev, V. I. Garmash, “Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 15–17 |
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2020 |
| 3. |
V. I. Garmash, V. E. Zemlyakov, V. I. Egorkin, A. V. Kovalchuk, S. Yu. Shapoval, “Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 748–752 ; Semiconductors, 54:8 (2020), 895–899 |
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2019 |
| 4. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2017 |
| 5. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshchenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin, “AlN/GaN heterostructures for normally-off transistors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402 ; Semiconductors, 51:3 (2017), 379–386 |
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2016 |
| 6. |
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604 ; Semiconductors, 50:12 (2016), 1574–1578 |
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| 7. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, M. A. Yagovkina, A. V. Sakharov, S. O. Usov, V. E. Zemlyakov, V. I. Egorkin, K. A. Bulashevich, S. Yu. Karpov, V. M. Ustinov, “Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1401–1407 ; Semiconductors, 50:10 (2016), 1383–1389 |
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| 8. |
E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338 ; Semiconductors, 50:3 (2016), 326–333 |
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| 9. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79 ; Tech. Phys. Lett., 42:7 (2016), 750–753 |
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| 10. |
N. V. Kuznetsova, D. V. Nechaev, N. M. Shmidt, S. Yu. Karpov, N. V. Rzheutskii, V. E. Zemlyakov, V. Kh. Kaibyshev, D. Yu. Kazantsev, S. I. Troshkov, V. I. Egorkin, B. Ya. Ber, E. V. Lutsenko, S. V. Ivanov, V. N. Zhmerik, “Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 57–63 ; Tech. Phys. Lett., 42:6 (2016), 635–638 |
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