|
|
|
Publications in Math-Net.Ru |
Citations |
|
2023 |
| 1. |
A. V. Belonovskii, V. P. Evtikhiev, M. I. Mitrofanov, V. V. Nikolaev, “Strong coupling of exciton in organic material and plasmonic WGM localized on the surface of silver nanoparticles”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 14–15  ; JETP Letters, 118:1 (2023), 21–25 |
2
|
|
2022 |
| 2. |
E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, “Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022), 611–612 ; JETP Letters, 115:10 (2022), 574–580  |
1
|
|
2021 |
| 3. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dyudelev, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade laser with radiation output through a textured layer”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1081–1085  ; Semiconductors, 56:1 (2022), 1–4 |
| 4. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov, “Surface emitting quantum-cascade ring laser”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 602–606 ; Semiconductors, 55:7 (2021), 591–594 |
2
|
| 5. |
A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maksimov, S. Breuer, “Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 51–54 |
|
2020 |
| 6. |
M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1390 ; Semiconductors, 54:12 (2020), 1682–1684 |
4
|
| 7. |
A. V. Belonovski, G. R. Pozina, Ya. V. Levitskii, K. M. Morozov, M. I. Mitrofanov, E. I. Girshova, K. A. Ivanov, S. N. Rodin, V. P. Evtikhiev, M. A. Kaliteevskii, “Strong coupling of excitons in hexagonal GaN microcavities”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 85–88 ; Semiconductors, 54:1 (2020), 127–130 |
1
|
| 8. |
A. V. Babichev, D. A. Pashnev, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, L. Ya. Karachinsky, I. I. Novikov, M. I. Mitrofanov, V. P. Evtikhiev, D. A. Firsov, L. E. Vorob'ev, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 8–11 ; Tech. Phys. Lett., 46:4 (2020), 312–315 |
8
|
|
2019 |
| 9. |
S. N. Rodin, V. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev, M. A. Kaliteevski, “GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography”, Fizika Tverdogo Tela, 61:12 (2019), 2333 ; Phys. Solid State, 61:12 (2019), 2335–2337 |
| 10. |
Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolaev, M. N. Mizerov, V. P. Evtikhiev, “Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1579–1583 ; Semiconductors, 53:11 (2019), 1545–1549 |
2
|
|
2018 |
| 11. |
V. V. Lundin, A. F. Tsatsul'nikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, Ya. V. Levitskii, V. P. Evtikhiev, “Selective epitaxial growth of III–N structures using ion-beam nanolithography”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1237–1243 ; Semiconductors, 52:10 (2018), 1357–1362 |
5
|
| 12. |
M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev, “Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 816–818 ; Semiconductors, 52:7 (2018), 954–956 |
2
|
|
| Organisations |
|
| |
|
|
Contact us: