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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
N. D. Zhukov, T. D. Smirnova, A. A. Khazanov, O. Yu. Tsvetkova, S. N. Shtykov, “Properties of semiconductor colloidal quantum dots obtained under controlled synthesis conditions”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1203–1209 |
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N. D. Zhukov, M. V. Gavrikov, V. F. Kabanov, I. T. Yagudin, “Single-electron emission-injection transport in a microstructure with colloidal quantum dots of narrow-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 319–325 ; Semiconductors, 55:5 (2021), 470–475 |
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N. D. Zhukov, S. A. Sergeev, A. A. Khazanov, I. T. Yagudin, “Features of the radiative properties of quantum-size particles of narrow-gap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021), 37–40 |
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2020 |
4. |
N. D. Zhukov, I. T. Yagudin, N. P. Abanshin, D. S. Mosiyash, “A study of quantum dots in a multigrain layer of a planar-end microstructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 40–43 ; Tech. Phys. Lett., 46:11 (2020), 1088–1091 |
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D. V. Krylsky, N. D. Zhukov, “Synthesis and properties of indium antimonide big quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:18 (2020), 15–18 ; Tech. Phys. Lett., 46:9 (2020), 901–904 |
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N. D. Zhukov, M. V. Gavrikov, D. V. Krylsky, “Single-electron transport in colloidal quantum dots of narrow-gap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 47–50 ; Tech. Phys. Lett., 46:9 (2020), 881–884 |
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2019 |
7. |
N. D. Zhukov, D. V. Krylsky, M. I. Shishkin, A. A. Khazanov, “On the synthesis and photoluminescence and cathodoluminescence properties of CdSe, CdTe, PbS, InSb, and GaAs colloidal quantum dots”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1103–1109 ; Semiconductors, 53:8 (2019), 1082–1087 |
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N. D. Zhukov, A. I. Mikhailov, D. S. Mosiyash, “Mechanism and features of field emission in semiconductors”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 340–344 ; Semiconductors, 53:3 (2019), 321–325 |
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9. |
D. V. Krylsky, N. D. Zhukov, “Synthesis, composition, photoluminescence, and stability of properties of colloidal InSb-based quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 10–13 ; Tech. Phys. Lett., 45:8 (2019), 801–804 |
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10. |
M. V. Gavrikov, N. D. Zhukov, D. S. Mosiyash, A. A. Khazanov, “Electron emission properties of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 46–49 ; Tech. Phys. Lett., 44:12 (2018), 1230–1233 |
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2018 |
11. |
N. D. Zhukov, A. G. Rokakh, M. I. Shishkin, “Properties of lead-sulfide nanoparticles in a multicrystalline structure”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 608–613 ; Semiconductors, 52:6 (2018), 755–759 |
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12. |
N. D. Zhukov, V. F. Kabanov, A. I. Mikhailov, D. S. Mosiyash, A. A. Khazanov, M. I. Shishkin, “Peculiarities of the properties of III–V semiconductors in a multigrain structure”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 83–88 ; Semiconductors, 52:1 (2018), 78–83 |
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13. |
N. D. Zhukov, M. I. Shishkin, A. G. Rokakh, “Plasma reflection in multigrain layers of narrow-bandgap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 102–110 ; Tech. Phys. Lett., 44:4 (2018), 362–365 |
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2017 |
14. |
N. D. Zhukov, D. S. Mosiyash, I. V. Sinev, A. A. Khazanov, A. V. Smirnov, I. V. Lapshin, “Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 72–79 ; Tech. Phys. Lett., 43:12 (2017), 1124–1127 |
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2016 |
15. |
N. D. Zhukov, E. G. Glukhovskoy, D. S. Mosiyash, “Local emission spectroscopy of surface micrograins in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 911–917 ; Semiconductors, 50:7 (2016), 894–900 |
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16. |
N. D. Zhukov, E. G. Glukhovskoy, A. A. Khazanov, “On the local injection of emitted electrons into micrograins on the surface of À$^{\mathrm{III}}$–Â$^{\mathrm{V}}$ semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 772–776 ; Semiconductors, 50:6 (2016), 756–760 |
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