|
This article is cited in 1 scientific paper (total in 1 paper)
Single-electron transport in colloidal quantum dots of narrow-gap semiconductors
N. D. Zhukova, M. V. Gavrikovb, D. V. Krylskyc a OOO NPP Volga, Saratov
b Saratov State University
c Research Institute of Applied Acoustics, Dubna
Abstract:
Single-electron transport in a planar structure of InSb, PbS, and CdSe semiconductor colloidal quantum dots has been studied by scanning tunneling microscopy. Current dips similar to the Coulomb gap have been observed in the I–V characteristics. The qualitative and numerical comparative estimates suggest that a structure consisting of a set of quantum dots exhibits single-electron transport and a phenomenon similar to the Coulomb blockade. The white light illumination of the sample during the measurements of the I–V characteristics breaks the Coulomb blockade and one can expect that a device element based on such a structure will respond to individual photons. In the Coulomb gap region, current oscillations at terahertz frequencies can occur.
Keywords:
colloidal quantum dot, single-electron transport, electron emission, Coulomb blockade, Coulomb gap.
Received: 24.04.2020 Revised: 06.06.2020 Accepted: 07.06.2020
Citation:
N. D. Zhukov, M. V. Gavrikov, D. V. Krylsky, “Single-electron transport in colloidal quantum dots of narrow-gap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 47–50; Tech. Phys. Lett., 46:9 (2020), 881–884
Linking options:
https://www.mathnet.ru/eng/pjtf5011 https://www.mathnet.ru/eng/pjtf/v46/i17/p47
|
Statistics & downloads: |
Abstract page: | 48 | Full-text PDF : | 20 |
|