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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 8, Pages 102–110
DOI: https://doi.org/10.21883/PJTF.2018.08.45973.17010
(Mi pjtf5837)
 

This article is cited in 3 scientific papers (total in 3 papers)

Plasma reflection in multigrain layers of narrow-bandgap semiconductors

N. D. Zhukov, M. I. Shishkin, A. G. Rokakh

Saratov State University
Full-text PDF (479 kB) Citations (3)
Abstract: Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 $\mu$m were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge $\sim$7 $\mu$m) is characterized by an absorption band at 2.1–2.3 $\mu$m, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 $\mu$m, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
Funding agency Grant number
Russian Foundation for Basic Research 16-07-00226
Received: 23.08.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 4, Pages 362–365
DOI: https://doi.org/10.1134/S1063785018040284
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Zhukov, M. I. Shishkin, A. G. Rokakh, “Plasma reflection in multigrain layers of narrow-bandgap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 102–110; Tech. Phys. Lett., 44:4 (2018), 362–365
Citation in format AMSBIB
\Bibitem{ZhuShiRok18}
\by N.~D.~Zhukov, M.~I.~Shishkin, A.~G.~Rokakh
\paper Plasma reflection in multigrain layers of narrow-bandgap semiconductors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 8
\pages 102--110
\mathnet{http://mi.mathnet.ru/pjtf5837}
\crossref{https://doi.org/10.21883/PJTF.2018.08.45973.17010}
\elib{https://elibrary.ru/item.asp?id=32740269}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 4
\pages 362--365
\crossref{https://doi.org/10.1134/S1063785018040284}
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  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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