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This article is cited in 3 scientific papers (total in 3 papers)
Plasma reflection in multigrain layers of narrow-bandgap semiconductors
N. D. Zhukov, M. I. Shishkin, A. G. Rokakh Saratov State University
Abstract:
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 $\mu$m were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge $\sim$7 $\mu$m) is characterized by an absorption band at 2.1–2.3 $\mu$m, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 $\mu$m, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
Received: 23.08.2017
Citation:
N. D. Zhukov, M. I. Shishkin, A. G. Rokakh, “Plasma reflection in multigrain layers of narrow-bandgap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 102–110; Tech. Phys. Lett., 44:4 (2018), 362–365
Linking options:
https://www.mathnet.ru/eng/pjtf5837 https://www.mathnet.ru/eng/pjtf/v44/i8/p102
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