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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 1, Pages 83–88
DOI: https://doi.org/10.21883/FTP.2018.01.45323.8515 (Mi phts5945) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Peculiarities of the properties of III–V semiconductors in a multigrain structure

N. D. Zhukova, V. F. Kabanovb, A. I. Mikhailovb, D. S. Mosiyasha, A. A. Khazanova, M. I. Shishkinb

a OOO Volga-Svet, Saratov, Russia
b Saratov State University
Full-text PDF (399 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.01.45323.8515
Abstract: The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
Funding agency Grant number
Russian Foundation for Basic Research 16-07-00093-а
16-07-00185-а
Received: 20.02.2017
Accepted: 22.02.2017
English version:
Semiconductors, 2018, Volume 52, Issue 1, Pages 78–83
DOI: https://doi.org/10.1134/S1063782618010256
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Zhukov, V. F. Kabanov, A. I. Mikhailov, D. S. Mosiyash, A. A. Khazanov, M. I. Shishkin, “Peculiarities of the properties of III–V semiconductors in a multigrain structure”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 83–88; Semiconductors, 52:1 (2018), 78–83
Citation in format AMSBIB
\Bibitem{ZhuKabMik18}
\by N.~D.~Zhukov, V.~F.~Kabanov, A.~I.~Mikhailov, D.~S.~Mosiyash, A.~A.~Khazanov, M.~I.~Shishkin
\paper Peculiarities of the properties of III--V semiconductors in a multigrain structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 1
\pages 83--88
\mathnet{http://mi.mathnet.ru/phts5945}
\crossref{https://doi.org/10.21883/FTP.2018.01.45323.8515}
\elib{https://elibrary.ru/item.asp?id=34982790}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 1
\pages 78--83
\crossref{https://doi.org/10.1134/S1063782618010256}
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  • https://www.mathnet.ru/eng/phts/v52/i1/p83
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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