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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 24, Pages 72–79
DOI: https://doi.org/10.21883/PJTF.2017.24.45344.16641
(Mi pjtf6047)
 

This article is cited in 7 scientific papers (total in 7 papers)

Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles

N. D. Zhukova, D. S. Mosiyasha, I. V. Sinevb, A. A. Khazanova, A. V. Smirnovb, I. V. Lapshinc

a Ref-SVET Company, Saratov, Russia
b Saratov State University
c State Research and Design Institute of the Rare Metal Industry, Moscow, Russia
Full-text PDF (409 kB) Citations (7)
Abstract: Current–voltage (I–V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I–V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.
Received: 27.12.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 12, Pages 1124–1127
DOI: https://doi.org/10.1134/S106378501712029X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Zhukov, D. S. Mosiyash, I. V. Sinev, A. A. Khazanov, A. V. Smirnov, I. V. Lapshin, “Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 72–79; Tech. Phys. Lett., 43:12 (2017), 1124–1127
Citation in format AMSBIB
\Bibitem{ZhuMosSin17}
\by N.~D.~Zhukov, D.~S.~Mosiyash, I.~V.~Sinev, A.~A.~Khazanov, A.~V.~Smirnov, I.~V.~Lapshin
\paper Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 24
\pages 72--79
\mathnet{http://mi.mathnet.ru/pjtf6047}
\crossref{https://doi.org/10.21883/PJTF.2017.24.45344.16641}
\elib{https://elibrary.ru/item.asp?id=30646465}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 12
\pages 1124--1127
\crossref{https://doi.org/10.1134/S106378501712029X}
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  • https://www.mathnet.ru/eng/pjtf/v43/i24/p72
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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