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This article is cited in 3 scientific papers (total in 3 papers)
A study of quantum dots in a multigrain layer of a planar-end microstructure
N. D. Zhukov, I. T. Yagudin, N. P. Abanshin, D. S. Mosiyash OOO NPP Volga, Saratov
Abstract:
Quantum dots (QDs) of Cds, PbS, and InSb semiconductors in a multi-grain layer of planar-edge microstructure were studied. A model of the ordered arrangement of CT in the micro-gap structure and the flow of current along the lines of parallel arrangement of QD is proposed. Electronic transport at low voltage values (less than 8 V) is determined by thermal and tunnel emission from the QD into the gap, at high values – by the charge restriction in the QD according to the Coulomb block model. A strong influence of IR and UV radiation on the VAC was found.
Keywords:
quantum dot, multigrain layer, planar-end microstructure, electron transport, tunnel emission, Coulomb blockade.
Received: 22.05.2020 Revised: 22.05.2020 Accepted: 28.07.2020
Citation:
N. D. Zhukov, I. T. Yagudin, N. P. Abanshin, D. S. Mosiyash, “A study of quantum dots in a multigrain layer of a planar-end microstructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 40–43; Tech. Phys. Lett., 46:11 (2020), 1088–1091
Linking options:
https://www.mathnet.ru/eng/pjtf4953 https://www.mathnet.ru/eng/pjtf/v46/i21/p40
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