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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
K. D. Moiseev, V. V. Romanov, “Band diagram of the InAs$_{1-y}$Sb$_{y}$/InAsSbP heterojunction in the composition range $y<$ 0.2”, Fizika Tverdogo Tela, 63:4 (2021), 475–482   ; Phys. Solid State, 63:4 (2021), 595–602 |
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| 2. |
A. A. Semakova, V. V. Romanov, N. L. Bazhenov, K. J. Mynbaev, K. D. Moiseev, “Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 277–281 ; Semiconductors, 55:3 (2021), 354–358 |
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2020 |
| 3. |
V. V. Romanov, E. V. Ivanov, K. D. Moiseev, “Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure”, Fizika Tverdogo Tela, 62:11 (2020), 1822–1827 ; Phys. Solid State, 62:11 (2020), 2039–2044 |
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| 4. |
V. V. Romanov, E. V. Ivanov, A. A. Pivovarova, K. D. Moiseev, Yu. P. Yakovlev, “Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 202–206 ; Semiconductors, 54:2 (2020), 253–257 |
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2019 |
| 5. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m”, Fizika Tverdogo Tela, 61:10 (2019), 1746–1753 ; Phys. Solid State, 61:10 (2019), 1699–1706 |
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| 6. |
M. P. Mikhailova, K. D. Moiseev, Yu. P. Yakovlev, “Discovery of III–V semiconductors: physical properties and application”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 291–308 ; Semiconductors, 53:3 (2019), 273–290 |
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2018 |
| 7. |
K. D. Moiseev, Yu. A. Kudriavtsev, T. B. Charikova, A. M. Lugovykh, T. E. Govorkova, V. I. Okulov, “Effects of magnetic ordering in conductivity and magnetization of gaas-based semiconductor heterostructures upon changing the concentration of the delta-layer of manganese admixture”, Fizika Tverdogo Tela, 60:12 (2018), 2325–2330 ; Phys. Solid State, 60:12 (2018), 2402–2407 |
| 8. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures”, Fizika Tverdogo Tela, 60:3 (2018), 585–590 ; Phys. Solid State, 60:3 (2018), 592–597 |
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2017 |
| 9. |
K. D. Moiseev, V. N. Nevedomskiy, Yu. Kudriavtsev, A. Escobosa-Echavarria, M. Lopez-Lopez, “On the delta-type doping of GaAs-based heterostructures with manganese compounds”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1189–1195 ; Semiconductors, 51:9 (2017), 1141–1147 |
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| 10. |
L. A. Sokura, Ya. A. Parkhomenko, K. D. Moiseev, V. N. Nevedomskiy, N. A. Bert, “InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1146–1150 ; Semiconductors, 51:8 (2017), 1101–1105 |
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2016 |
| 11. |
K. D. Moiseev, V. V. Romanov, Yu. A. Kudriavtsev, “Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy”, Fizika Tverdogo Tela, 58:11 (2016), 2203–2207 ; Phys. Solid State, 58:11 (2016), 2285–2289 |
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| 12. |
A. M. Lugovykh, T. B. Charikova, V. I. Okulov, K. D. Moiseev, Yu. A. Kudriavtsev, “Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese”, Fizika Tverdogo Tela, 58:11 (2016), 2160–2163 ; Phys. Solid State, 58:11 (2016), 2240–2243 |
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| 13. |
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev, “Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 993–996 ; Semiconductors, 50:7 (2016), 976–979 |
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| 14. |
V. V. Romanov, P. A. Dementev, K. D. Moiseev, “Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 927–931 ; Semiconductors, 50:7 (2016), 910–914 |
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