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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
A. A. Semakovaa, V. V. Romanovb, N. L. Bazhenovb, K. J. Mynbaevb, K. D. Moiseevb a St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
Abstract:
The results of a study of the electroluminescence of the asymmetric InAs/InAs$_{1-y}$Sb$_y$/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region $y$ = 0.15 and $y$ = 0.16 in the temperature range 4.2–300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs/InAs$_{1-y}$Sb$_y$/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2–180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.
Keywords:
heterojunctions, indium arsenide, antimonides, electroluminescence.
Received: 06.11.2020 Revised: 16.11.2020 Accepted: 16.11.2020
Citation:
A. A. Semakova, V. V. Romanov, N. L. Bazhenov, K. J. Mynbaev, K. D. Moiseev, “Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 277–281; Semiconductors, 55:3 (2021), 354–358
Linking options:
https://www.mathnet.ru/eng/phts5070 https://www.mathnet.ru/eng/phts/v55/i3/p277
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