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Fizika Tverdogo Tela, 2016, Volume 58, Issue 11, Pages 2160–2163 (Mi ftt9780)  
This article is cited in 1 scientific paper (total in 1 paper)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism

Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese

A. M. Lugovykha, T. B. Charikovaab, V. I. Okulovab, K. D. Moiseevc, Yu. A. Kudriavtsevd

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Ioffe Institute, St. Petersburg
d National Polytechnical Institute, (Cinvestav-IPN), Mexico
Full-text PDF (289 kB) Citations (1)
Abstract: The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/GaAs/Ga0.84In0.16As/GaAs quantum well and a δ-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.
English version:
Physics of the Solid State, 2016, Volume 58, Issue 11, Pages 2240–2243
DOI: https://doi.org/10.1134/S1063783416110226
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Lugovykh, T. B. Charikova, V. I. Okulov, K. D. Moiseev, Yu. A. Kudriavtsev, “Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese”, Fizika Tverdogo Tela, 58:11 (2016), 2160–2163; Phys. Solid State, 58:11 (2016), 2240–2243
Citation in format AMSBIB
\Bibitem{LugChaOku16}
\by A.~M.~Lugovykh, T.~B.~Charikova, V.~I.~Okulov, K.~D.~Moiseev, Yu.~A.~Kudriavtsev
\paper Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 11
\pages 2160--2163
\mathnet{http://mi.mathnet.ru/ftt9780}
\elib{https://elibrary.ru/item.asp?id=27368817}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 11
\pages 2240--2243
\crossref{https://doi.org/10.1134/S1063783416110226}
Linking options:
  • https://www.mathnet.ru/eng/ftt9780
  • https://www.mathnet.ru/eng/ftt/v58/i11/p2160
    • This publication is cited in the following 1 articles:
    1. K. D. Moiseev, Yu. A. Kudriavtsev, T. B. Charikova, A. M. Lugovykh, T. E. Govorkova, V. I. Okulov, “Effects of magnetic ordering in conductivity and magnetization of gaas-based semiconductor heterostructures upon changing the concentration of the delta-layer of manganese admixture”, Phys. Solid State, 60:12 (2018), 2402–2407  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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