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This article is cited in 1 scientific paper (total in 1 paper)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism
Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese
A. M. Lugovykha, T. B. Charikovaab, V. I. Okulovab, K. D. Moiseevc, Yu. A. Kudriavtsevd a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Ioffe Institute, St. Petersburg
d National Polytechnical Institute, (Cinvestav-IPN), Mexico
Abstract:
The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs quantum well and a $\delta$-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.
Citation:
A. M. Lugovykh, T. B. Charikova, V. I. Okulov, K. D. Moiseev, Yu. A. Kudriavtsev, “Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese”, Fizika Tverdogo Tela, 58:11 (2016), 2160–2163; Phys. Solid State, 58:11 (2016), 2240–2243
Linking options:
https://www.mathnet.ru/eng/ftt9780 https://www.mathnet.ru/eng/ftt/v58/i11/p2160
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