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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. M. Smirnov, A. V. Kremleva, Sh. Sh. Sharofidinov, V. E. Bugrov, A. E. Romanov, “Misfit stress relaxation in $\alpha$-Ga$_{2}$O$_{3}$/$\alpha$-Al$_{2}$O$_{3}$ heterostructures via formation of misfit dislocations”, Fizika Tverdogo Tela, 63:6 (2021), 788–795   ; Phys. Solid State, 63:6 (2021), 924–931 |
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| 2. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, A. S. Grashchenko, A. V. Kandakov, E. V. Osipova, K. P. Kotlyar, E. V. Ubyivovk, “Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 63:3 (2021), 363–369 ; Phys. Solid State, 63:3 (2021), 442–448 |
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| 3. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710 ; Semiconductors, 55:12 (2021), 995–1001 |
| 4. |
A. V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin, “Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 7–10 ; Tech. Phys. Lett., 47:6 (2021), 466–469 |
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2020 |
| 5. |
E. A. Panyutin, Sh. Sh. Sharofidinov, T. A. Orlova, S. A. Snytkina, A. A. Lebedev, “Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices”, Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020), 450–455 ; Tech. Phys., 65:3 (2020), 428–433 |
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| 6. |
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 22–25 ; Tech. Phys. Lett., 46:6 (2020), 539–542 |
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| 7. |
G. A. Gavrilov, K. L. Muratikov, E. A. Panyutin, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Specific features of the pyroelectric effect in epitaxial aluminum nitride layers obtained on Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 20–23 ; Tech. Phys. Lett., 46:1 (2020), 16–18 |
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2019 |
| 8. |
O. N. Sergeeva, A. V. Solnyshkin, D. A. Kiselev, T. S. Ilina, S. A. Kukushkin, Sh. Sh. Sharofidinov, E. Yu. Kaptelov, I. P. Pronin, “Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films”, Fizika Tverdogo Tela, 61:12 (2019), 2379–2384 ; Phys. Solid State, 61:12 (2019), 2386–2391 |
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| 9. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, “A new method of growing AlN, GaN, and AlGaN bulk crystals using hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 61:12 (2019), 2338–2343 ; Phys. Solid State, 61:12 (2019), 2342–2347 |
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| 10. |
A. M. Mizerov, S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, S. N. Timoshnev, K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. D. Bouravlev, “Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 61:12 (2019), 2289–2293 ; Phys. Solid State, 61:12 (2019), 2277–2281 |
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| 11. |
Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Redkov, A. S. Grashchenko, A. V. Osipov, “Growing III–V semiconductor heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 24–27 ; Tech. Phys. Lett., 45:7 (2019), 711–713 |
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2018 |
| 12. |
G. A. Gavrilov, A. F. Kapralov, K. L. Muratikov, E. A. Panyutin, A. V. Sotnikov, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Studying the pyroelectric effect in AlN epilayers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 11–19 ; Tech. Phys. Lett., 44:8 (2018), 709–712 |
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2016 |
| 13. |
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000 ; Semiconductors, 50:7 (2016), 980–983 |
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| 14. |
Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov, A. E. Romanov, “On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552 ; Semiconductors, 50:4 (2016), 541–544 |
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