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Fizika Tverdogo Tela, 2019, Volume 61, Issue 12, Pages 2379–2384
DOI: https://doi.org/10.21883/FTT.2019.12.48558.22ks (Mi ftt8572) 		 
This article is cited in 8 scientific papers (total in 8 papers)

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Ferroelectricity

Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films

O. N. Sergeevaab, A. V. Solnyshkinab, D. A. Kiselevbc, T. S. Ilinac, S. A. Kukushkinbd, Sh. Sh. Sharofidinovbe, E. Yu. Kaptelovbe, I. P. Proninbe

a Tver State University
b Herzen State Pedagogical University of Russia, St. Petersburg
c National University of Science and Technology «MISIS», Moscow
d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
e Ioffe Institute, St. Petersburg
Full-text PDF (451 kB) Citations (8)
DOI: https://doi.org/10.21883/FTT.2019.12.48558.22ks
Abstract: Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a buffer silicon carbide (SiC) layer and on vicinal planes are investigated. The results of studies of the polar properties by two independent methods–the dynamic pyroelectric effect and the piezoresponse force microscopy–show that the SiC buffer layer application considerably improves polar properties of the aluminum nitride thin layer.
Keywords: silicon substrates with different orientations, vicinal surfaces, silicon carbide buffer layer, thin layers of aluminum nitride, pyroelectric effect, piezoelectric effect.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2811.2017/4.6
11.9706.2017/7.8
The study was accomplished within the design part of the State Order, project nos. 16.2811.2017/4.6.
Implementation of the scanning probe microscopy methods in the studies using the equipment of the Material Engineering and Metallurgy Resource Sharing Center at the National University of Science and Technology MISIS were supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 11.9706.2017/7.8.
Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 12, Pages 2386–2391
DOI: https://doi.org/10.1134/S1063783419120485
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. N. Sergeeva, A. V. Solnyshkin, D. A. Kiselev, T. S. Ilina, S. A. Kukushkin, Sh. Sh. Sharofidinov, E. Yu. Kaptelov, I. P. Pronin, “Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films”, Fizika Tverdogo Tela, 61:12 (2019), 2379–2384; Phys. Solid State, 61:12 (2019), 2386–2391
Citation in format AMSBIB
\Bibitem{SerSolKis19}
\by O.~N.~Sergeeva, A.~V.~Solnyshkin, D.~A.~Kiselev, T.~S.~Ilina, S.~A.~Kukushkin, Sh.~Sh.~Sharofidinov, E.~Yu.~Kaptelov, I.~P.~Pronin
\paper Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 12
\pages 2379--2384
\mathnet{http://mi.mathnet.ru/ftt8572}
\crossref{https://doi.org/10.21883/FTT.2019.12.48558.22ks}
\elib{https://elibrary.ru/item.asp?id=42571133}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 12
\pages 2386--2391
\crossref{https://doi.org/10.1134/S1063783419120485}
Linking options:
  • https://www.mathnet.ru/eng/ftt8572
  • https://www.mathnet.ru/eng/ftt/v61/i12/p2379
    • This publication is cited in the following 8 articles:
    1. S. A. Kukushkin, A. V. Osipov, “Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)”, Russ J Gen Chem, 92:4 (2022), 584  crossref
    2. O. A. Shustova, O. N. Sergeeva, A. V. Solnyshkin, I. T. Zezianov, E. Yu. Kaptelov, I. P. Pronin, Sh. Sh. Sharofudinov, S. A. Kukushkin, “Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy”, Ferroelectrics, 591:1 (2022), 121  crossref
    3. Sergey Kukushkin, Andrey Osipov, Alexey Redkov, Advanced Structured Materials, 164, Mechanics and Control of Solids and Structures, 2022, 335  crossref
    4. L V Baranova, V I Strunin, “Influence of technological regimes of plasma chemical deposition on texture formation in aluminum nitride films”, J. Phys.: Conf. Ser., 1901:1 (2021), 012102  crossref
    5. O. N. Sergeeva, A. V. Solnyshkin, S. A. Kukushkin, Sh. Sh. Sharofidinov, O. P. Kazarova, E. N. Mohov, E. Yu. Kaptelov, I. P. Pronin, “Dielectric and polar properties of aluminum nitride single crystals”, Ferroelectrics, 576:1 (2021), 55  crossref
    6. A. V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin, “Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate”, Tech. Phys. Lett., 47:6 (2021), 466–469  mathnet  mathnet  crossref  crossref
    7. S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Tech. Phys. Lett., 46:6 (2020), 539–542  mathnet  mathnet  crossref  crossref
    8. A. V. Babaev, V. K. Nevolin, V. N. Statsenko, S. D. Fedotov, K. A. Tsarik, “Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy On 3C-SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation”, Mech. Solids, 55:1 (2020), 84  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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