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This article is cited in 5 scientific papers (total in 5 papers)
Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate
A. V. Solnyshkina, O. N. Sergeevaa, O. A. Shustovaa, Sh. Sh. Sharofidinovbc, M. V. Staritsynd, E. Yu. Kaptelovb, S. A. Kukushkinc, I. P. Proninb a Tver State University
b Ioffe Institute, St. Petersburg
c Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
d Prometei Central Research Institute of Structural Materials, St. Petersburg
Abstract:
We studied the microstructure and the dielectric and pyroelectric properties of Al$_{x}$Ga$_{1-x}$N composite epitaxial layers grown on SiC/Si(111) substrates by chloride-hydride epitaxy. The phenomenon of spontaneous (in the process of layer growth) formation of a system of heterojunctions was discovered. We obtained a material based on Al$_{x}$Ga$_{1-x}$N epitaxial layers, which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.
Keywords:
aluminum nitride, gallium nitride, solid solutions of aluminum and gallium nitrides, silicon carbide on silicon, chloride-hydride epitaxy, dielectric properties, pyroelectric properties.
Received: 28.12.2020 Revised: 28.12.2020 Accepted: 26.01.2021
Citation:
A. V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin, “Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 7–10; Tech. Phys. Lett., 47:6 (2021), 466–469
Linking options:
https://www.mathnet.ru/eng/pjtf4794 https://www.mathnet.ru/eng/pjtf/v47/i9/p7
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