|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Formation of iron silicides under graphene grown on the silicon carbide surface”, Fizika Tverdogo Tela, 62:10 (2020), 1726–1730   ; Phys. Solid State, 62:10 (2020), 1944–1948 |
1
|
| 2. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide”, Fizika Tverdogo Tela, 62:3 (2020), 462–471 ; Phys. Solid State, 62:3 (2020), 519–528 |
5
|
| 3. |
I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, S. V. Belov, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, “Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1388 ; Semiconductors, 54:12 (2020), 1674–1677 |
| 4. |
P. A. Alekseev, B. R. Borodin, I. A. Mustafin, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, V. N. Trukhin, “Terahertz near-field response in graphene ribbons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 29–32 ; Tech. Phys. Lett., 46:8 (2020), 756–759 |
2
|
| 5. |
A. S. Usikov, S. P. Lebedev, A. D. Roenkov, I. S. Barash, S. V. Novikov, M. V. Puzyk, A. V. Zubov, Yu. N. Makarov, A. A. Lebedev, “Studying the sensitivity of graphene for biosensor applications”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6 ; Tech. Phys. Lett., 46:5 (2020), 462–465 |
4
|
|
2019 |
| 6. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, P. V. Bulat, “Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum”, Fizika Tverdogo Tela, 61:10 (2019), 1978–1984 ; Phys. Solid State, 61:10 (2019), 1940–1946 |
3
|
| 7. |
G. S. Grebenyuk, E. Yu. Lobanova, D. A. Smirnov, I. A. Eliseyev, A. V. Zubov, A. N. Smirnov, S. P. Lebedev, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Cobalt intercalation of graphene on silicon carbide”, Fizika Tverdogo Tela, 61:7 (2019), 1374–1384 ; Phys. Solid State, 61:7 (2019), 1316–1326 |
10
|
| 8. |
S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev, A. A. Lebedev, P. V. Bulat, “Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1940–1946 ; Tech. Phys., 64:12 (2019), 1843–1849 |
2
|
| 9. |
A. A. Lebedev, I. P. Nikitina, N. V. Seredova, N. K. Poletaev, S. P. Lebedev, V. V. Kozlovskii, A. V. Zubov, “A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 28–30 ; Tech. Phys. Lett., 45:6 (2019), 557–559 |
3
|
|
2018 |
| 10. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. A. Lebedev, Yu. A. Kumzerov, “Field effect in monolayer graphene associated with the formation of graphene–water interface”, Fizika Tverdogo Tela, 60:12 (2018), 2474–2477 ; Phys. Solid State, 60:12 (2018), 2668–2671 |
1
|
| 11. |
M. V. Gomoyunova, G. S. Grebenyuk, V. Yu. Davydov, I. A. Ermakov, I. A. Eliseyev, A. A. Lebedev, S. P. Lebedev, E. Yu. Lobanova, A. N. Smirnov, D. A. Smirnov, I. I. Pronin, “Intercalation of iron atoms under graphene formed on silicon carbide”, Fizika Tverdogo Tela, 60:7 (2018), 1423–1430 ; Phys. Solid State, 60:7 (2018), 1439–1446 |
12
|
| 12. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, P. V. Bulat, “Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum”, Fizika Tverdogo Tela, 60:7 (2018), 1403–1408 ; Phys. Solid State, 60:7 (2018), 1419–1424 |
1
|
| 13. |
S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Gushchina, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov, “Graphene on silicon carbide as a basis for gas- and biosensor applications”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 95–97  |
2
|
| 14. |
N. V. Agrinskaya, A. A. Lebedev, S. P. Lebedev, M. A. Shakhov, E. Lahderanta, “Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1512–1517 ; Semiconductors, 52:12 (2018), 1616–1620 |
| 15. |
P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1507–1511 ; Semiconductors, 52:12 (2018), 1611–1615 |
3
|
| 16. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320 ; Semiconductors, 52:11 (2018), 1428–1431 |
2
|
| 17. |
P. A. Alekseev, B. R. Borodin, M. S. Dunaevskii, A. N. Smirnov, V. Yu. Davydov, S. P. Lebedev, A. A. Lebedev, “Local anodic oxidation of graphene layers on SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018), 34–40 ; Tech. Phys. Lett., 44:5 (2018), 381–383 |
10
|
|
2017 |
| 18. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. A. Lebedev, Yu. A. Kumzerov, “Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide”, Fizika Tverdogo Tela, 59:10 (2017), 2063–2065 ; Phys. Solid State, 59:10 (2017), 2089–2091 |
1
|
| 19. |
V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124 ; Semiconductors, 51:8 (2017), 1072–1080 |
48
|
| 20. |
A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev, I. P. Nikitina, N. V. Seredova, L. V. Shakhov, V. V. Kozlovsky, “Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1088–1090 ; Semiconductors, 51:8 (2017), 1044–1046 |
| 21. |
S. P. Lebedev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, V. S. Levitskii, M. G. Mynbaeva, M. M. Kulagina, B. Hähnlein, J. Pezoldt, A. A. Lebedev, “Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 64–72 ; Tech. Phys. Lett., 43:9 (2017), 849–852 |
6
|
|
2016 |
| 22. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. N. Smirnov, V. Yu. Davydov, A. A. Lebedev, Yu. A. Kumzerov, “Transport properties of graphene in the region of its interface with water surface”, Fizika Tverdogo Tela, 58:7 (2016), 1432–1435 ; Phys. Solid State, 58:7 (2016), 1483–1486 |
2
|
| 23. |
A. A. Lebedev, S. P. Lebedev, S. N. Novikov, V. Yu. Davydov, A. N. Smirnov, D. P. Litvin, Yu. N. Makarov, V. S. Levitskii, “Supersensitive graphene-based gas sensor”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 135–139 ; Tech. Phys., 61:3 (2016), 453–457 |
16
|
| 24. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, “Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 967–972 ; Semiconductors, 50:7 (2016), 951–956 |
| 25. |
S. Yu. Davydov, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova, L. M. Sorokin, “Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 66–71 ; Tech. Phys. Lett., 42:12 (2016), 1153–1155 |
|
|
|
2020 |
| 26. |
S. P. Lebedev, I. A. Eliseyev, V. N. Panteleev, P. A. Dementev, V. V. Shnitov, M. K. Rabchinskii, D. A. Smirnov, A. V. Zubov, A. A. Lebedev, “Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1383 ; Semiconductors, 54:12 (2020), 1657–1660 |
|
| Organisations |
|
| |
|
|
Contact us: