|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
P. S. Gavrina, A. A. Podoskin, I. Shushkanov, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Температурная зависимость выходной оптической мощности полупроводниковых лазеров-тиристоров на основе гетероструктур AlGaAs/GaAs/InGaAs”, Kvantovaya Elektronika, 54:4 (2024), 218–223  |
|
2023 |
| 2. |
S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop'ev, N. A. Pikhtin, “High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence”, Kvantovaya Elektronika, 53:5 (2023), 374–378 [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S976–S983] |
|
2022 |
| 3. |
S. O. Slipchenko, D. N. Romanovich, P. S. Gavrina, D. A. Veselov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 52:2 (2022), 174–178 [Quantum Electron., 52:2 (2022), 174–178   ] |
3
|
|
2021 |
| 4. |
A. A. Podoskin, P. S. Gavrina, V. S. Golovin, S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, I. V. Miroshnikov, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 466–472  |
| 5. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 460–465 ; Semiconductors, 55:5 (2021), 518–523 |
| 6. |
P. S. Gavrina, A. A. Podoskin, E. V. Fomin, D. A. Veselov, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures”, Kvantovaya Elektronika, 51:2 (2021), 129–132 [Quantum Electron., 51:2 (2021), 129–132 ] |
6
|
|
2020 |
| 7. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, A. E. Kazakova, V. A. Kapitonov, S. O. Slipchenko, N. A. Pikhtin, “Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 734–742 ; Semiconductors, 54:8 (2020), 882–889 |
2
|
| 8. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489 ; Semiconductors, 54:5 (2020), 581–586 |
2
|
| 9. |
O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin, “Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 478–483 ; Semiconductors, 54:5 (2020), 575–580 |
5
|
| 10. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 452–457 ; Semiconductors, 54:5 (2020), 529–533 |
2
|
|
2019 |
| 11. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843 ; Semiconductors, 53:6 (2019), 828–832 |
5
|
| 12. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 816–823 ; Semiconductors, 53:6 (2019), 806–813 |
5
|
| 13. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, D. N. Romanovich, V. S. Golovin, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 7–11 ; Tech. Phys. Lett., 45:4 (2019), 374–378 |
3
|
|
2018 |
| 14. |
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, “All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1491–1498 ; Semiconductors, 52:12 (2018), 1595–1602 |
5
|
|
| Organisations |
|
| |
|
|
Contact us: