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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
Yu. M. Kuznetsov, M. V. Dorokhin, A. V. Nezhdanov, D. A. Zdoroveishchev, V. P. Lesnikov, A. I. Mashin, “Method for forming films of the $\beta$-FeSi$_2$ phase by pulsed laser deposition in vacuum”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 773–778   ; Semiconductors, 55:9 (2021), 749–754 |
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2020 |
| 2. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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2019 |
| 3. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, A. I. Mashin, E. E. Morozova, A. V. Nezhdanov, A. V. Novikov, E. V. Skorokhodov, D. V. Shengurov, A. N. Yablonskii, “Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1360–1365 ; Semiconductors, 53:10 (2019), 1324–1328 |
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2018 |
| 4. |
A. V. Romashkin, A. A. Murzanev, A. M. Kiselev, A. I. Korytin, M. A. Kudryashov, A. V. Nezhdanov, L. A. Mochalov, A. I. Mashin, A. N. Stepanov, “Structural modification of pecvd As$_{50}$S$_{50}$ chalcogenide-glass films by femtosecond laser radiation”, Optics and Spectroscopy, 124:5 (2018), 706–712 ; Optics and Spectroscopy, 124:5 (2018), 741–747 |
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| 5. |
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336 ; Semiconductors, 52:11 (2018), 1442–1447 |
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2017 |
| 6. |
D. A. Grachev, A. V. Ershov, I. A. Karabanova, A. V. Pirogov, A. V. Nezhdanov, A. I. Mashin, D. A. Pavlov, “Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures”, Fizika Tverdogo Tela, 59:5 (2017), 965–971 ; Phys. Solid State, 59:5 (2017), 992–998 |
| 7. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
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2016 |
| 8. |
M. A. Kudryashov, A. I. Mashin, A. V. Nezhdanov, A. A. Logunov, T. A. Gracheva, T. A. Kuz'micheva, G. Chidichimo, G. De Filpo, “Structure and optical properties of the silver/polyacrylonitrile nanocomposites”, Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016), 80–85 ; Tech. Phys., 61:11 (2016), 1684–1688 |
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| 9. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275 ; Semiconductors, 50:9 (2016), 1248–1253 |
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| 10. |
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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1986 |
| 11. |
A. F. Khokhlov, A. I. Mashin, A. V. Ershov, Yu. A. Mordvinova, N. I. Mashin, “Electric and Optical Properties of the $a$-Si$_{1-x$Ge$_{x}$} Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1288–1291 |
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