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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations
S. Yu. Turishcheva, V. A. Terekhova, D. A. Koyudaa, A. V. Ershovb, A. I. Mashinb, E. V. Parinovaa, D. N. Nesterova, D. A. Grachevb, I. A. Karabanovab, È. P. Domashevskayaa a Voronezh State University
b Lobachevsky State University of Nizhny Novgorod
Abstract:
The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic $a$-SiO$_{x}$/SiO$_2$, $a$-SiO$_{x}$/Аl$_2$О$_3$, and $a$-SiO$_{x}$/ZrO$_2$ compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100$^\circ$C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.
Received: 26.07.2016 Accepted: 15.08.2016
Citation:
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366; Semiconductors, 51:3 (2017), 349–352
Linking options:
https://www.mathnet.ru/eng/phts6210 https://www.mathnet.ru/eng/phts/v51/i3/p363
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