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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
I. G. Dyachkova, D. A. Zolotov, A. S. Kumskov, I. S. Volchkov, V. V. Berestov, E. V. Matveev, “Potential of the microwave method for the activation of carbon materials in comparison with the traditional thermal method”, UFN, 193:12 (2023), 1325–1334  ; Phys. Usp., 66:12 (2023), 1248–1257   |
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D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov, V. V. Volkov, I. G. Dyachkova, P. V. Konarev, V. A. Grigorev, E. V. Suvorov, “New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data”, UFN, 193:9 (2023), 1001–1009 ; Phys. Usp., 66:9 (2023), 943–950 |
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2021 |
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D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov, I. G. Dyachkova, E. V. Suvorov, “Unusual X-shaped defects in the silicon single crystal subjected to four-point bending”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:3 (2021), 161–167  ; JETP Letters, 113:3 (2021), 149–154 |
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2020 |
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A. A. Shiryaev, D. A. Zolotov, E. M. Suprun, I. G. Dyachkova, S. A. Ivakhnenko, V. E. Asadchikov, “Contribution of lattice defects to the intensity of quasi-forbidden X-ray reflections of diamond: comparison of X-ray topography and infrared spectroscopy data”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:9 (2020), 597–601 ; JETP Letters, 111:9 (2020), 489–493 |
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V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, E. V. Nikitina, “Correcting the characteristics of silicon photodiodes by ion implantation”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 557–563 ; Semiconductors, 54:6 (2020), 666–671 |
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2019 |
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V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy”, Fizika Tverdogo Tela, 61:10 (2019), 1754–1762 ; Phys. Solid State, 61:10 (2019), 1707–1715 |
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V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data”, Fizika Tverdogo Tela, 61:8 (2019), 1437–1442 ; Phys. Solid State, 61:8 (2019), 1383–1388 |
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| 8. |
V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, Yu. S. Krivonosov, F. N. Chukhovskii, “X-ray diagnostics of microstructure defects of silicon crystals irradiated by hydrogen ions”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 731–736 ; Tech. Phys., 64:5 (2019), 680–685 |
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