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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 5, Pages 731–736
DOI: https://doi.org/10.21883/JTF.2019.05.47476.346-18 (Mi jtf5619) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physical science of materials

X-ray diagnostics of microstructure defects of silicon crystals irradiated by hydrogen ions

V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, Yu. S. Krivonosov, F. N. Chukhovskii

Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
Full-text PDF (143 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2019.05.47476.346-18
Abstract: Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness $L_{\operatorname{eff}}$ and mean relative deformation $\Delta a/a$ of a doped layer, are determined depending on the implantation dose and substrate temperature.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
Received: 25.09.2018
Revised: 25.09.2018
Accepted: 23.10.2018
English version:
Technical Physics, 2019, Volume 64, Issue 5, Pages 680–685
DOI: https://doi.org/10.1134/S1063784219050049
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, Yu. S. Krivonosov, F. N. Chukhovskii, “X-ray diagnostics of microstructure defects of silicon crystals irradiated by hydrogen ions”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 731–736; Tech. Phys., 64:5 (2019), 680–685
Citation in format AMSBIB
\Bibitem{AsaDyaZol19}
\by V.~E.~Asadchikov, I.~G.~D'yachkova, D.~A.~Zolotov, Yu.~S.~Krivonosov, F.~N.~Chukhovskii
\paper X-ray diagnostics of microstructure defects of silicon crystals irradiated by hydrogen ions
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 5
\pages 731--736
\mathnet{http://mi.mathnet.ru/jtf5619}
\crossref{https://doi.org/10.21883/JTF.2019.05.47476.346-18}
\elib{https://elibrary.ru/item.asp?id=39133806}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 5
\pages 680--685
\crossref{https://doi.org/10.1134/S1063784219050049}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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