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Fizika Tverdogo Tela, 2019, Volume 61, Issue 10, Pages 1754–1762
DOI: https://doi.org/10.21883/FTT.2019.10.48245.498 (Mi ftt8651) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductors

Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy

V. E. Asadchikova, I. G. D'yachkovaa, D. A. Zolotova, F. N. Chukhovskiia, L. M. Sorokinb

a Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
b Ioffe Institute, St. Petersburg
Full-text PDF (1455 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2019.10.48245.498
Abstract: The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals irradiated with protons with energies 100 + 200 + 300 keV with the total dose 2 $\times$ 10$^{16}$ cm$^{-2}$ and the evolution of the defect structure during heat treatment have been obtained by high-resolution three-crystal X-ray diffraction and transmission electron microscopy over wide temperature range from 200 to 1100$^\circ$C.
Keywords: silicon, hydrogen ions, three-crystal x-ray diffractometry, transmission electron microscopy, post-implantation annealing, radiation defects.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the framework of the State task to the Federal Research Centre Crystallography and Photonics, Russian Academy of Sciences.
Received: 29.05.2019
Revised: 29.05.2019
Accepted: 04.06.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 10, Pages 1707–1715
DOI: https://doi.org/10.1134/S1063783419100068
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy”, Fizika Tverdogo Tela, 61:10 (2019), 1754–1762; Phys. Solid State, 61:10 (2019), 1707–1715
Citation in format AMSBIB
\Bibitem{AsaDyaZol19}
\by V.~E.~Asadchikov, I.~G.~D'yachkova, D.~A.~Zolotov, F.~N.~Chukhovskii, L.~M.~Sorokin
\paper Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 10
\pages 1754--1762
\mathnet{http://mi.mathnet.ru/ftt8651}
\crossref{https://doi.org/10.21883/FTT.2019.10.48245.498}
\elib{https://elibrary.ru/item.asp?id=41174911}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 10
\pages 1707--1715
\crossref{https://doi.org/10.1134/S1063783419100068}
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  • https://www.mathnet.ru/eng/ftt8651
  • https://www.mathnet.ru/eng/ftt/v61/i10/p1754
    • This publication is cited in the following 1 articles:
    1. V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, E. V. Nikitina, “Correcting the characteristics of silicon photodiodes by ion implantation”, Semiconductors, 54:6 (2020), 666–671  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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