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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 113, Issue 3, Pages 161–167
DOI: https://doi.org/10.31857/S1234567821030046 (Mi jetpl6353) 		 
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Unusual X-shaped defects in the silicon single crystal subjected to four-point bending

D. A. Zolotova, V. E. Asadchikova, A. V. Buzmakova, I. G. Dyachkovaa, E. V. Suvorovb

a Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, 119333 Russia
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia
Full-text PDF (877 kB) Citations (7)
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DOI: https://doi.org/10.31857/S1234567821030046
Abstract: Dislocations in single-crystal silicon created by the four-point bending method are investigated using a laboratory X-ray source. Two- and three-dimensional diffraction images in the Laue geometry of unusual X-shaped dislocation structures have been obtained for the first time. The spatial arrangement of such linear defects is analyzed and their geometric characteristics are quantitatively determined.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation
Russian Foundation for Basic Research 18-29-26036_мк
19-02-00556_A
The work was supported by the Ministry of Science and Higher Education (state assignment to the Federal Scientific Research Center Crystallography and Photonics, application of tomographic algorithms) and by the Russian Foundation for Basic Research (project no. 18-29-26036_mk, search for diffraction reflections, and project no. 19-02-00556_A, experimental data analysis).
Received: 30.11.2020
Revised: 14.12.2020
Accepted: 24.12.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 113, Issue 3, Pages 149–154
DOI: https://doi.org/10.1134/S0021364021030115
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov, I. G. Dyachkova, E. V. Suvorov, “Unusual X-shaped defects in the silicon single crystal subjected to four-point bending”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:3 (2021), 161–167; JETP Letters, 113:3 (2021), 149–154
Citation in format AMSBIB
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\paper Unusual X-shaped defects in the silicon single crystal subjected to four-point bending
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\pages 161--167
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    • This publication is cited in the following 7 articles:
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