|
This article is cited in 1 scientific paper (total in 1 paper)
Semiconductors
On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data
V. E. Asadchikova, I. G. D'yachkovaa, D. A. Zolotova, F. N. Chukhovskiia, L. M. Sorokinb a Federal Research Center Crystallography and Photonics, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
b Ioffe Institute, St. Petersburg
Abstract:
In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 $\times$ 10$^{16}$ cm$^{-2}$ during the subsequent heat exposure in the temperature range from 200 to 1100$^{\circ}$C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning $\alpha$ from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.
Keywords:
silicon, hydrogen ions, three-crystal X-ray diffractometry, radiation defects, post-implantation annealing.
Received: 22.03.2019 Revised: 22.03.2019 Accepted: 25.03.2019
Citation:
V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data”, Fizika Tverdogo Tela, 61:8 (2019), 1437–1442; Phys. Solid State, 61:8 (2019), 1383–1388
Linking options:
https://www.mathnet.ru/eng/ftt8721 https://www.mathnet.ru/eng/ftt/v61/i8/p1437
|
Statistics & downloads: |
Abstract page: | 67 | Full-text PDF : | 12 |
|