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Fizika Tverdogo Tela, 2019, Volume 61, Issue 8, Pages 1437–1442
DOI: https://doi.org/10.21883/FTT.2019.08.47966.430
(Mi ftt8721)
 

This article is cited in 1 scientific paper (total in 1 paper)

Semiconductors

On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data

V. E. Asadchikova, I. G. D'yachkovaa, D. A. Zolotova, F. N. Chukhovskiia, L. M. Sorokinb

a Federal Research Center Crystallography and Photonics, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
b Ioffe Institute, St. Petersburg
Full-text PDF (186 kB) Citations (1)
Abstract: In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 $\times$ 10$^{16}$ cm$^{-2}$ during the subsequent heat exposure in the temperature range from 200 to 1100$^{\circ}$C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning $\alpha$ from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.
Keywords: silicon, hydrogen ions, three-crystal X-ray diffractometry, radiation defects, post-implantation annealing.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
The work was supported by the Ministry of Science and Higher Education.
Received: 22.03.2019
Revised: 22.03.2019
Accepted: 25.03.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 8, Pages 1383–1388
DOI: https://doi.org/10.1134/S1063783419080079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data”, Fizika Tverdogo Tela, 61:8 (2019), 1437–1442; Phys. Solid State, 61:8 (2019), 1383–1388
Citation in format AMSBIB
\Bibitem{AsaDyaZol19}
\by V.~E.~Asadchikov, I.~G.~D'yachkova, D.~A.~Zolotov, F.~N.~Chukhovskii, L.~M.~Sorokin
\paper On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 8
\pages 1437--1442
\mathnet{http://mi.mathnet.ru/ftt8721}
\crossref{https://doi.org/10.21883/FTT.2019.08.47966.430}
\elib{https://elibrary.ru/item.asp?id=41130104}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 8
\pages 1383--1388
\crossref{https://doi.org/10.1134/S1063783419080079}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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