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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
M. A. Bobrov, S. A. Blokhin, N. A. Maleev, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. V. Rakhlin, A. I. Galimov, Yu. M. Serov, S. I. Troshkov, V. M. Ustinov, A. A. Toropov, “Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 592–598  ; JETP Letters, 116:9 (2022), 613–618 |
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2021 |
| 2. |
A. I. Galimov, M. V. Rakhlin, G. V. Klimko, Yu. M. Zadiranov, Yu. A. Guseva, S. I. Troshkov, T. V. Shubina, A. A. Toropov, “Source of indistinguishable single photons based on epitaxial InAs/GaAs quantum dots for integration in quantum computing schemes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:4 (2021), 248–255  ; JETP Letters, 113:4 (2021), 252–258   |
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| 3. |
N. A. Maleev, A. G. Kuz'menkov, M. M. Kulagina, A. P. Vasil'ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov, “Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 36–38 |
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2020 |
| 4. |
N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000 ; Tech. Phys., 65:6 (2020), 957–960 |
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2019 |
| 5. |
M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. V. Sedova, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, Yu. A. Guseva, Ya. V. Terent'ev, S. V. Ivanov, A. A. Toropov, “Highly efficient semiconductor emitter of single photons in the red spectral range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019), 147–151 ; JETP Letters, 109:3 (2019), 145–149 |
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| 6. |
N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33 ; Tech. Phys. Lett., 45:11 (2019), 1092–1096 |
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2018 |
| 7. |
A. N. Semenov, D. V. Nechaev, S. I. Troshkov, A. V. Nashchekin, P. N. Brunkov, V. N. Zhmerik, S. V. Ivanov, “Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1663–1667 ; Semiconductors, 52:13 (2018), 1770–1774 |
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| 8. |
E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov, “Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 515 ; Semiconductors, 52:5 (2018), 622–624 |
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2017 |
| 9. |
D. V. Lebedev, A. M. Mintairov, A. S. Vlasov, V. Yu. Davydov, M. M. Kulagina, S. I. Troshkov, A. A. Bogdanov, A. N. Smirnov, A. Gocalinska, G. Juska, E. Pelucchi, J. Kapaldo, S. Rouvimov, J. Merz, “Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1066–1070 ; Tech. Phys., 62:7 (2017), 1082–1086 |
| 10. |
A. V. Babichev, N. V. Kryzhanovskaya, È. I. Moiseev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, S. A. Blokhin, M. A. Bobrov, Yu. M. Zadiranov, S. I. Troshkov, A. Yu. Egorov, “Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1176–1181 ; Semiconductors, 51:9 (2017), 1127–1132 |
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| 11. |
V. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul'nikov, “InGaN/GaN light-emitting diode microwires of submillimeter length”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 101–104 ; Semiconductors, 51:1 (2017), 100–103 |
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2016 |
| 12. |
F. I. Zubov, N. V. Kryzhanovskaya, È. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maksimov, A. E. Zhukov, “Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1425–1428 ; Semiconductors, 50:10 (2016), 1408–1411 |
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| 13. |
M. A. Bobrov, N. A. Maleev, S. A. Blokhin, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, V. Lisak, V. M. Ustinov, “Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1408–1413 ; Semiconductors, 50:10 (2016), 1390–1395 |
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| 14. |
N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-$\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 393–397 ; Semiconductors, 50:3 (2016), 390–393 |
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| 15. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 16. |
S. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, N. D. Prasolov, P. N. Brunkov, V. S. Levitskii, V. Lisak, N. A. Maleev, V. M. Ustinov, “A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 57–65 ; Tech. Phys. Lett., 42:10 (2016), 1049–1053 |
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| 17. |
S. A. Blokhin, N. V. Kryzhanovskaya, È. I. Moiseev, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, V. N. Nevedomskiy, E. V. Nikitina, N. A. Maleev, V. M. Ustinov, “Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79 ; Tech. Phys. Lett., 42:10 (2016), 1009–1012 |
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| 18. |
N. V. Kuznetsova, D. V. Nechaev, N. M. Shmidt, S. Yu. Karpov, N. V. Rzheutskii, V. E. Zemlyakov, V. Kh. Kaibyshev, D. Yu. Kazantsev, S. I. Troshkov, V. I. Egorkin, B. Ya. Ber, E. V. Lutsenko, S. V. Ivanov, V. N. Zhmerik, “Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 57–63 ; Tech. Phys. Lett., 42:6 (2016), 635–638 |
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| 19. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, S. I. Troshkov, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsul'nikov, “The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 86–93 ; Tech. Phys. Lett., 42:4 (2016), 431–434 |
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1992 |
| 20. |
S. A. Gurevich, A. V. Kolobov, V. M. Lyubin, S. I. Nesterov, M. M. Kulagina, F. N. Timofeev, S. I. Troshkov, “APPLICATION OF AS2S3-ORGANIC PHOTORESIST MASK FOR REACTIVE ION ETCHING
OF SEMICONDUCTORS-A(III)B(V)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 85–90 |
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1990 |
| 21. |
Y. A. Goldberg, T. V. Lvova, O. A. Mezrin, S. I. Troshkov, B. V. Tsarenkov, “Коротковолновая фоточувствительность поверхностно-барьерных
структур GaAs”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1835–1840 |
| 22. |
O. A. Mezrin, S. I. Troshkov, A. Ya. Shik, “Двумерный электронный газ в изотипном гетеропереходе”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 638–646 |
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1989 |
| 23. |
O. V. Konstantinov, O. A. Mezrin, S. I. Troshkov, “Теория квазибаллистического транспорта электронов в биполярном
гетеротранзисторе с сильно легированной субмикронной базой”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 508–516 |
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1988 |
| 24. |
O. A. Mezrin, S. I. Troshkov, “Диффузия горячих фотоэлектронов в металл — эффективный механизм
потерь в фотоэлементах с барьером Шоттки”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 176–179 |
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1987 |
| 25. |
O. V. Konstantinov, O. A. Mezrin, S. I. Troshkov, “Long-Wavelength Edge of Spectral Dependence of Photocurrent in the Hetero-$р{-}n$ Junction”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2142–2148 |
| 26. |
Z. I. Alferov, O. A. Mezrin, M. A. Sinicin, S. I. Troshkov, B. S. Yavich, “Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 494–499 |
| 27. |
O. A. Mezrin, S. I. Troshkov, “Calculation of energy-levels of two-dimensional electronic gas in the isotypic heterotransition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:1 (1987), 14–19 |
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1986 |
| 28. |
O. A. Mezrin, S. I. Troshkov, “Theory of $S$-Type Current–Voltage Characteristic in Multilayer Isotype $n^+{-}n$ Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1298–1301 |
| 29. |
O. V. Konstantinov, O. A. Mezrin, B. V. Egorov, V. M. Lantratov, S. I. Troshkov, “Theory of Photoelectric Converter with Energy-Gap Gradient in the Space-Charge Region of Hetero-$p{-}n$-Junction”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1262–1270 |
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1985 |
| 30. |
O. V. Konstantinov, O. A. Mezrin, B. V. Egorov, V. M. Lantratov, T. V. Lvova, S. I. Troshkov, “Sublinearity of Capacity–Voltage Characteristics
of Sharp Asymmetric $p{-}n$ Junctions”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1589–1596 |
| 31. |
V. M. Andreev, B. V. Egorov, V. M. Lantratov, S. I. Troshkov, “Heterophotocells with Low Value of Saturation Back Current”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 276–281 |
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1983 |
| 32. |
V. M. Andreev, B. V. Egorov, V. M. Lantratov, V. D. Rumancev, S. I. Troshkov, “SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION
POSITION”, Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983), 1658–1660 |
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